Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.

A semiconductor package may include a redistribution substrate, a first semiconductor chip on the redistribution substrate, and a second semiconductor chip between the redistribution substrate and the first semiconductor chip. The second semiconductor chip may have a width in a first direction that is smaller than a width of the first semiconductor chip in the first direction. The first semiconductor chip may include a first alignment key pattern on a bottom surface thereof. The second semiconductor chip may be spaced apart from the first alignment key pattern. The second semiconductor chip may include a second interconnection layer on the bottom surface of the first semiconductor chip, a second semiconductor substrate on a bottom surface of the second interconnection layer and exposing a bottom surface of an edge region of the second interconnection layer, and a second alignment key pattern on the edge region of the second interconnection layer.

A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first alignment pattern having a plurality of first scale patterns arranged in a first direction. The second semiconductor device is mounted over the first semiconductor device and includes a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.

An electronic package structure, an electronic substrate, and a method of manufacturing an electronic package structure are provided. The electronic package structure includes a substrate. The substrate includes a bonding region and an alignment structure. The bonding region is located at a side of the substrate and configured to bond with an electronic component. The alignment structure is located at the side of the substrate and out of the bonding region and configured to providing a fiducial mark for position-aligning, wherein the alignment structure comprises a first region and a second region visually distinct from the first region.

Semiconductor device assemblies having features that are used to align semiconductor dies, and associated systems and methods, are disclose herein. In some embodiments, a semiconductor device assembly includes substrate that has a top surface and an alignment structure at the top surface. A first die is disposed over the top surface of the substrate, and the first die has a first channel that extends between a top side and a bottom side of the first die. The first channel is vertically aligned with and exposes the alignment structure at the top surface of the substrate.

An aggregate die comprises a substrate, a first sub die, and a second sub die. The substrate comprises a surface with a first set of substrate alignment guides and a second set of substrate alignment guides. The first sub die comprises a first set of sub die alignment guides that interface with the substrate alignment guides in the first set of substrate alignment guides. The second sub die comprises a second set of sub die alignment guides that interface with substrate alignment guides in the second set of substrate alignment guides.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.

Methods and system for flip chip alignment for substrate and leadframe applications are disclosed and may include placing a semiconductor die on bond fingers of a metal leadframe, wherein at least two of the bond fingers comprise one or more recessed self-alignment features. A reflow process may be performed on the semiconductor die and leadframe, thereby melting solder bumps on the semiconductor die such that a solder bump may be pulled into each of the recessed self-alignment features and aligning the solder bumps on the semiconductor die to the bond fingers. The recessed self-alignment features may be formed utilizing a chemical etch process or a stamping process. A surface of the recessed self-alignment features or the bond fingers of the metal leadframe may be roughened. A solder paste may be formed in the recessed self-alignment features prior to placing the semiconductor die on the bond fingers of the metal leadframe.