A method of forming a package and a package are provided. The method includes placing a main die and a dummy die side by side on a carrier substrate. The method also includes forming a molding material along sidewalls of the main die and the dummy die. The method also includes forming a redistribution layer comprising a plurality of vias and conductive lines over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die. The method also includes removing the carrier substrate.

A semiconductor package includes a lower redistribution layer disposed on a lower surface of the semiconductor chip including an insulating layer, a redistribution pattern, a via, an under bump metal (UBM), and a post disposed on the redistribution pattern. The post vertically overlaps with the UBM. A mold layer is on the lower redistribution layer and surrounds the semiconductor chip. A connecting terminal is connected to the UBM. The UBM includes a first section contacting the redistribution pattern, and a second section contacting the insulating layer. The post has a ring shape having an inner surface and an outer surface when viewed in a top view. A maximum width of the inner surface is less than a maximum width of an upper surface of the first section. A maximum width of the outer surface is greater than the maximum width of the upper surface of the first section.

A semiconductor device package includes an electronic component, a first set of conductive wires electrically connected to the electronic component, and an insulation layer surrounding the first set of conductive wires. The insulation layer exposes a portion of the first set of the conductive wires. The insulation layer is devoid of a filler.

A method of forming a package and a package are provided. The method includes placing a main die and a dummy die side by side on a carrier substrate. The method also includes forming a molding material along sidewalls of the main die and the dummy die. The method also includes forming a redistribution layer comprising a plurality of vias and conductive lines over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die. The method also includes removing the carrier substrate.

A fan-out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

A method of forming a package and a package are provided. The method includes placing a main die and a dummy die side by side on a carrier substrate. The method also includes forming a molding material along sidewalls of the main die and the dummy die. The method also includes forming a redistribution layer comprising a plurality of vias and conductive lines over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die. The method also includes removing the carrier substrate.

A semiconductor package may include a semiconductor chip having a first surface and a second surface opposite to the first surface and having a plurality of circuit patterns provided in the second surface, a redistribution wiring layer on the second surface of the semiconductor chip and having a plurality of redistribution wirings and a plurality of bonding pads, the redistribution wirings being electrically connected to the circuit patterns, the bonding pads electrically connected to the redistribution wirings and exposed from a lower surface, a plurality of conductive bumps on the plurality of bonding pads, respectively, and a plurality of spacers on the lower surface of the redistribution wiring layer and configured to align the plurality of conductive bumps through respective through holes of a test socket and to space the redistribution wiring layer from the test socket.

A semiconductor package device and a method of manufacturing thereof are provided. The semiconductor package device includes a circuit layer including a conductive circuit, and conductive pads connected to the conductive circuit; a chip disposed on the circuit layer, and connected to the conductive circuit, wherein the chip has a side surface, an upper surface, and heat-dissipation grooves formed on the upper surface; and an encapsulation layer covering on the circuit layer, and covering the side surface of the chip. The heat-dissipation grooves are exposed from the encapsulation layer.

A fan-out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

A method includes providing a plurality of semiconductor devices on a semiconductor structure, providing a top side metallization on a first side of the semiconductor structure, wherein the top side metallization comprises a plurality of bond pads on each of the semiconductor devices, and providing a back side metallization on a second side of the semiconductor structure opposite the first side of the semiconductor structure. The back side metallization is not provided on portions of the second side of the semiconductor structure corresponding to dicing streets between the semiconductor devices.