Provided is a method of mounting a conductive ball, and more particularly, a method of mounting a conductive ball, whereby defects during a process of mounting a conductive ball on a substrate by using a mounting hole formed in a mask may be prevented, and a conductive ball having a small size may also be effectively mounted on the substrate. According to the method of mounting a conductive ball, a process of mounting a conductive ball may be performed by preventing deformation of a mask, thus achieving a high quality of the process without omitting any conductive balls.

A semiconductor package includes a semiconductor chip comprising a first surface and a second surface, a redistribution layer on the first surface of the semiconductor chip, an under bump metal (UBM) layer on the redistribution layer, and a solder bump on the UBM layer, and the solder bump covers both outer side surfaces of the UBM layer.

Provided is a method of mounting a conductive ball, and more particularly, a method of mounting a conductive ball, whereby defects during a process of mounting a conductive ball on a substrate by using a mounting hole formed in a mask may be prevented, and a conductive ball having a small size may also be effectively mounted on the substrate. According to the method of mounting a conductive ball, a process of mounting a conductive ball may be performed by preventing deformation of a mask, thus achieving a high quality of the process without omitting any conductive balls.

A vertically oriented treatment chamber for the processing of a flux-free solder ball (or plated solder ball) loaded wafer chip. A treatment chamber comprises a first or upper heater at an upper end of the treatment chamber and a second or lower heater at a lower end of the treatment chamber. The treatment chamber includes a centrally disposed, preloaded flux free solder ball loaded wafer chip support ring movable upwardly and downwardly within the treatment chamber in response to temperature sensed monitoring of a wafer chip supported on the wafer chip support ring.

There is provided a bonding method capable of accurately positioning a bonding stage. According to an aspect of the present invention, a bonding method using a bonding apparatus including a rotation drive mechanism for rotating a bonding stage 1 about a -axis includes the steps of: (e) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a certain area of a substrate held on the bonding stage; (f) unlocking the bonding stage with respect to the -axis, and rotating the bonding stage about the -axis with the rotation drive mechanism; and (g) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a remaining region of the substrate.

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

An electronic component rework method including: driving an actuating device to open a plurality of holes of a gate to allow electronic components to pass through downward; driving a pneumatic control device to perform a negative pressure operation on a pneumatic channel of a tubular part to draw a to-be-outputted electronic component into the tubular part and hold the to-be-outputted electronic component therein; and moving the tubular part to above a target contact pad of a substrate, driving the pneumatic control device to terminate the negative pressure operation and then perform a blowing operation to send downward the to-be-outputted electronic component and prevent another electronic component from moving downward through the tubular part.

A plating system comprising a plating tank for applying plate processing to a substrate, a sensor configured to measure actual plating film thickness of the substrate, and a controller configured to control plating current supplied to the plating tank and plating time for the plate processing of the substrate within the plating tank. The controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe. At least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and the result is reflected in the plate processing for the subsequent substrate.

A vertically oriented treatment chamber for the processing of a flux-free solder ball (or plated solder ball) loaded wafer chip. A treatment chamber comprises a first or upper heater at an upper end of the treatment chamber and a second or lower heater at a lower end of the treatment chamber. The treatment chamber includes a centrally disposed, preloaded flux free solder ball loaded wafer chip support ring movable upwardly and downwardly within the treatment chamber in response to temperature sensed monitoring of a wafer chip supported on the wafer chip support ring.

The present disclosure provides a semiconductor IC structure having vertical wire bonding and method of making it. The method includes two steps. First step: providing a semiconductor chip, disposing a first solder joint and a second solder joint separately on its surface, disposing a wire bonding pad at the first solder joint, to connect to an internal functioning device of the semiconductor chip, and disposing a dummy pad at the second solder joint. Second step: bonding a metal wire on the wire bonding pad, cutting the metal wire on the dummy pad, and breaking the metal wire by pulling above the wire bonding pad, to obtain a vertical conductive column connected to the wire bonding pad.