A bonding method of a first member and a second member includes: forming a first wire bonding bump (12) on a first electrode (14) arranged in the first member; forming a second wire bonding bump (22) on a second electrode 24 arranged in the second member; and flattening a tip section of the second wire bonding bump to form a bump flat surface (221). The tip section (120) of the first wire bonding bump and the bump flat surface (221) are pressure bonded to each other.

A plating system comprising a plating tank for applying plate processing to a substrate, a sensor configured to measure actual plating film thickness of the substrate, and a controller configured to control plating current supplied to the plating tank and plating time for the plate processing of the substrate within the plating tank. The controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe. At least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and the result is reflected in the plate processing for the subsequent substrate.

The present application discloses a solder ball attachment jig for preventing warpage of a reconstructed panel in a panel-level semiconductor process, a solder ball attachment system including the solder ball attachment jig, and a method of preventing warpage in attaching solder balls for a panel-level semiconductor process with the solder ball attachment jig. The solder ball attachment jig includes a platform having at least one ejector, and a plate carrier configured to be coupled to the platform for carrying and fixing the reconstructed panel with a plurality of semiconductor dies and a warpage-preventing device. The plate carrier further includes a base plate and at least one releasing hole extending through the base plate, wherein the at least one ejector is configured to be inserted through the at least one releasing hole for releasing the reconstructed panel from the solder ball attachment jig.

An apparatus for injecting solder material in via holes located in a top surface of a wafer is provided. The apparatus includes an injection head having a contact surface for contacting the top surface of the wafer, and at least one aperture for injecting the solder material though the injection head into the via holes. The apparatus further includes an evacuating device connected to the injection head for evacuating gas from the via holes. The injection head has a chamfer part on an edge of a contact surface contacting the top surface of the wafer.

A method is provided for assembly of a micro-electronic component, in which a conductive die bonding material is used. This material includes a conductive thermosettable resin material or flux based solder and a dynamic release layer adjacent to the conductive thermoplastic material die bonding material layer A laser beam is impinged on the dynamic release layer, adjacent to the die bonding material layer, in such a way that the dynamic release layer is activated to direct conductive die bonding material matter towards the pad structure to be treated, to cover a selected part of the pad structure with a transferred conductive die bonding material. The laser beam is restricted in timing and energy, in such a way that the die bonding material matter remains thermosetting. Accordingly, adhesive matter can be transferred while preventing that the adhesive is rendered ineffective by thermal overexposure in the transferring process.

Solder-bumped semiconductor substrates (e.g., semiconductor wafers) and methods for forming solder bumped semiconductor substrates are provided, in which solder bumps are formed on a semiconductor substrate using preformed solder balls having different compositions and/or sizes. Two or more solder balls masks are successively utilized to place different types of preformed solder balls (differing in composition and/or size) into corresponding cavities of a solder ball fixture, and thereby form an array of different types of preformed solder balls arranged in the solder ball fixture. The array of preformed solder balls in the solder ball fixture are then transferred to corresponding contact pads of a semiconductor substrate (e.g., semiconductor wafer) using a single solder reflow process. This process allows different types of preformed solder bumps to be bonded to a semiconductor substrate at the same time using a single solder reflow process.

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

Solder-bumped semiconductor substrates (e.g., semiconductor wafers) and methods for forming solder bumped semiconductor substrates are provided, in which solder bumps are formed on a semiconductor substrate using preformed solder balls having different compositions and/or sizes. Two or more solder balls masks are successively utilized to place different types of preformed solder balls (differing in composition and/or size) into corresponding cavities of a solder ball fixture, and thereby form an array of different types of preformed solder balls arranged in the solder ball fixture. The array of preformed solder balls in the solder ball fixture are then transferred to corresponding contact pads of a semiconductor substrate (e.g., semiconductor wafer) using a single solder reflow process. This process allows different types of preformed solder bumps to be bonded to a semiconductor substrate at the same time using a single solder reflow process.

Apparatus and method for filling and optionally bumping through-silicon vias (TSVs) in device circuits utilizing inkjet printheads for ejecting sufficiently small droplets of conductive nanoparticle inks into the TSVs. Ejected drops are accurately impinged along the length of each TSV within a substrate being heated to drive evaporation of the solvent carrying the metal nanoparticles into the trenches while not de-encapsulating the particles. Once all TSVs are filled, and optionally bumped, to a desired level while they are being heated then bonding and sintering can be performed, such as utilizing thermocompression bonding to another integrated circuit.

Solder-bumped semiconductor substrates (e.g., semiconductor wafers) and methods for forming solder bumped semiconductor substrates are provided, in which solder bumps are formed on a semiconductor substrate using preformed solder balls having different compositions and/or sizes. Two or more solder balls masks are successively utilized to place different types of preformed solder balls (differing in composition and/or size) into corresponding cavities of a solder ball fixture, and thereby form an array of different types of preformed solder balls arranged in the solder ball fixture. The array of preformed solder balls in the solder ball fixture are then transferred to corresponding contact pads of a semiconductor substrate (e.g., semiconductor wafer) using a single solder reflow process. This process allows different types of preformed solder bumps to be bonded to a semiconductor substrate at the same time using a single solder reflow process.