An apparatus for injecting solder material in via holes located in a top surface of a wafer is provided. The apparatus includes an injection head having a contact surface for contacting the top surface of the wafer, and at least one aperture for injecting the solder material though the injection head into the via holes. The apparatus further includes an evacuating device connected to the injection head for evacuating gas from the via holes. The injection head has a chamfer part on an edge of a contact surface contacting the top surface of the wafer.

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

A microelectronic structure includes a semiconductor having conductive elements at a first surface. Wire bonds have bases joined to the conductive elements and free ends remote from the bases, the free ends being remote from the substrate and the bases and including end surfaces. The wire bonds define edge surfaces between the bases and end surfaces thereof. A compliant material layer extends along the edge surfaces within first portions of the wire bonds at least adjacent the bases thereof and fills spaces between the first portions of the wire bonds such that the first portions of the wire bonds are separated from one another by the compliant material layer. Second portions of the wire bonds are defined by the end surfaces and portions of the edge surfaces adjacent the end surfaces that are extend from a third surface of the compliant later.

A method for attaching an integrated circuit (IC) to an IC package substrate includes forming a solder bump on a bond pad of an IC die, forming a solder-wetting protrusion on a bond pad of an IC package substrate, and bonding the solder bump of the IC die to the solder-wetting protrusion of the IC package substrate.

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

The inventive concept relates to an apparatus for manufacturing a semiconductor package and a method of manufacturing a semiconductor package. According to embodiments, the method of manufacturing a semiconductor package may include preparing a substrate including upper conductive pads on an upper surface of the substrate, preparing a first semiconductor chip including first solder balls, wherein a first dielectric layer covering sidewalls of the first solder balls is on a lower surface of the first semiconductor chip, disposing the first semiconductor chip on the substrate such that the first solder balls are on the upper conductive pads, and bonding the first solder balls to the upper conductive pads by applying an alternating current electric field to the first dielectric layer.

Semiconductor device (50) includes: semiconductor element (1) having a plurality of electrode terminals (2); bump (8) formed on each of the plurality of electrode terminals (2) and having tapering part (8a) that narrows with distance from a side close to corresponding one of electrode terminals (2); and buffer part (3c) covered with bump (8).

The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.