A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder includes a plurality of suction portions that suck a second substrate and that are arranged on concentric circles about a center of the second substrate substantially evenly. The second holder bonds the second substrate to the first substrate while opposing the second substrate to the first substrate. A first gas supply portion has a plurality of first gas supply ports to supply gas toward a bonding position between the first substrate and the second substrate. The first gas supply ports are provided to correspond to at least a part of outermost suction portions that are farthest ones of the suction portions from a center of the second holder, and are concentrically arranged on a circle about the center substantially evenly.

The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A cover structure for a light source includes a frame having an inner space, a driver, and an oxygen discharger. The frame is combined with the light source such that an object disposed in the inner space is covered by the frame, and the inner space is sealed by the combined frame and light source to provide a closed space between the frame and the light source enclosing the object. The driver combines the frame and the light source by moving the frame toward the light source such that the frame contacts the light source. The oxygen discharger creates a low-oxygen state in the closed space by discharging oxygen from the closed space.

A cover structure for a light source includes a frame having an inner space, a driver, and an oxygen discharger. The frame is combined with the light source such that an object disposed in the inner space is covered by the frame, and the inner space is sealed by the combined frame and light source to provide a closed space between the frame and the light source enclosing the object. The driver combines the frame and the light source by moving the frame toward the light source such that the frame contacts the light source. The oxygen discharger creates a low-oxygen state in the closed space by discharging oxygen from the closed space.

A substrate bonding apparatus for bonding a first substrate to a second substrate includes a first bonding chuck configured to fix the first substrate to a first surface of the first bonding chuck; a second bonding chuck configured to fix the second substrate to a second surface of the second bonding chuck, the second surface facing the first surface; a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view, the process gas injector configured to inject a process gas between the first substrate and the second substrate when respectively disposed on the first bonding chuck and the second bonding chuck; and an air curtain generator disposed at an outside of the process gas injector in the plan view, the air curtain generator configured to inject an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate.

A method of bonding a semiconductor element to a substrate includes: carrying a semiconductor element including a plurality of first electrically conductive structures with a bonding tool; supporting a substrate including a plurality of second electrically conductive structures with a support structure; providing a reducing gas in contact with each of the plurality of first conductive structures and the plurality of second conductive structures; establishing contact between corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures; moving at least one of the semiconductor element and the substrate such that the corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures are separated; re-establishing contact between the plurality of first conductive structures and the plurality of second conductive structures; and bonding the plurality of first conductive structures to the respective ones of the plurality of second conductive structures.

Disclosures of the present invention mainly describe a method for manufacturing perovskite solar cell module. At first, a laser scribing is adopted for forming multi transparent conductive films (TCFs) on a transparent substrate. Subsequently, by using a first mask, multi HTLs, active layers, and ETLs are sequentially formed on the TCFs. Consequently, by the use of a second make, each of the ETLs is formed with an electrically connecting layer thereon, such that a perovskite solar cell module comprising a plurality of solar cell units is hence completed on the transparent substrate. It is worth explaining that, during the whole manufacturing process, each of the solar cell units is prevented from receiving bad influences that are provided by laser scribing or manufacture environment, such that each of the solar cell units is able to exhibit outstanding photoelectric conversion efficiency.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.