A semiconductor device includes a first die; a second die attached over the first die; a metal enclosure directly contacting and extending between the first die and the second die, wherein the first metal enclosure is continuous and encircles a set of one or more internal interconnects, wherein the first metal enclosure is configured to electrically connect to a first voltage level; and a second metal enclosure directly contacting and extending between the first die and the second die, wherein the second metal enclosure is continuous and encircles the first metal enclosure and is configured to electrically connect to a second voltage level; wherein the first metal enclosure and the second metal enclosure are configured to provide an enclosure capacitance encircling the set of one or more internal interconnects for shielding signals on the set of one or more internal interconnects.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A cover structure for a light source includes a frame having an inner space, a driver, and an oxygen discharger. The frame is combined with the light source such that an object disposed in the inner space is covered by the frame, and the inner space is sealed by the combined frame and light source to provide a closed space between the frame and the light source enclosing the object. The driver combines the frame and the light source by moving the frame toward the light source such that the frame contacts the light source. The oxygen discharger creates a low-oxygen state in the closed space by discharging oxygen from the closed space.

A method includes bringing into contact respective first sides of a plurality of dies and a die attach film on a major surface of a carrier wafer, and simultaneously heating portions of the die attach film contacting the plurality of dies in order to simultaneously bond the plurality of dies to the die attach film.

A method includes bringing into contact respective first sides of a plurality of dies and a die attach film on a major surface of a carrier wafer, and simultaneously heating portions of the die attach film contacting the plurality of dies in order to simultaneously bond the plurality of dies to the die attach film.

A bonding apparatus includes a chuck and a bonding head. The chuck is configured to carry a plurality of substrates to be bonded. The bonding head has a cavity facing the chuck and includes a divider, at least one pneumatic component and a diaphragm. The divider is disposed in the cavity and dividing the cavity into a plurality of compartments. The at least one pneumatic component is disposed in at least one of the compartments. The diaphragm covers the cavity and is disposed between the at least one pneumatic component and the chuck.

A substrate processing apparatus 30 includes a first holding unit 200 configured to hold a processing target substrate W; a second holding unit 300 disposed to face the first holding unit 200 and configured to hold a support substrate S; and an ultraviolet irradiation unit 400 configured to irradiate an ultraviolet ray to an adhesive G provided between the processing target substrate W and the support substrate S. Each of the support substrate S and the second holding unit 300 is made of an ultraviolet transmissive material. An electrode 320 configured to electrostatically attract the support substrate S is provided within the second holding unit 300. A diffusion layer 330 configured to diffuse a transmission direction of the ultraviolet ray is provided at a position closer to the support substrate S between the support substrate S and the electrode 320 within the second holding unit 300.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions that are movable relative to one another in a longitudinal direction. In some embodiments, the individual regions include a first region having a first outer surface, and a second region peripheral to the first region and including a second outer surface. The first region is movable in a longitudinal direction to a first position, and the second region is movable in the longitudinal direction to a second position, such that in the second position, the second outer surface of the second region extends longitudinally beyond the first outer surface of the first region. The bond chuck can be positioned proximate a substrate of a semiconductor device such that movement of the first region and/or second region affect a shape of the substrate, which thereby causes an adhesive on the substrate to flow in a lateral, predetermined direction.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.