A bonding apparatus is provided. This bonding apparatus uses images captured by an imaging apparatus and performs a packaging process for a semiconductor chip and additional processes other than the packaging process. The bonding apparatus is provided with: an aperture switching mechanism provided in an optical system of the imaging apparatus and capable of switching between a first aperture and a second aperture that has an aperture hole diameter greater than that of the first aperture; and a control unit which controls the aperture switching mechanism to switch to either the first aperture or the second aperture. The control unit performs the packaging process using an image captured by switching to the first aperture and performs the additional processes using an image captured by switching to the second aperture.

The invention relates to a bonding arrangement comprising a bonding tool including a tool shank, which is designed as elongated in a tool longitudinal direction, and including a tool tip, which adjoins the tool shank, and comprising a light guide designed to conduct a laser beam, the light guide being provided in a longitudinal recess of the bonding tool, the longitudinal recess extending from an end face of the bonding tool opposite the tool tip in the direction of the tool tip, a functional recess being formed on the lateral surface of the bonding tool, and the longitudinal recess being made to extend up to the functional recess. The invention further relates to a bonding tool having a functional application as well as the use of the bonding arrangement according to the invention and/or the bonding tool for ultrasonic bonding.

This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

Provided is a wire bonding apparatus for electrically connecting an electrode and an aluminum alloy wire to each other by wire bonding. The apparatus includes a wire feeding device which feeds the wire. The wire has a diameter not less than 500 m and not greater than 600 m. The apparatus includes a heating device heats the wire to a temperature that is not lower than 50 C. and not higher than 100 C. The apparatus further includes a pressure device which presses the wire against the electrode. The apparatus further includes an ultrasonic wave generating device which generates an ultrasonic vibration that is applied to the wire that is pressed by the pressure device.

To provide a wire bonding apparatus, which is insusceptible to a bonding state at a second bonding point due to a wire cut error or the like, or to members such as a capillary and a wire, and is capable of automatically protruding the wire from a leading end of the capillary, provided is a wire bonding apparatus including: a capillary (6) having a through hole through which a wire (40) is to be inserted; a holding unit, which is provided above the capillary (6), and is configured to hold the wire (40) inserted through the capillary (6); and a vibrating unit configured to vertically vibrate the capillary (6). Under a state in which the holding unit holds the wire (40), the vibrating unit vertically vibrates the capillary (6) so that the wire (40) is protruded from the leading end of the capillary.

A semiconductor device inspection device includes a semiconductor device stage, a sound wave generator, a laser emitter, a photoreceiver, and a processing circuit. The sound wave generator is configured to generate a sound wave having a natural frequency of a bonding wire included in a semiconductor device placed on the semiconductor device stage. The laser emitter is configured to direct laser toward the bonding wire while the sound wave generator generates the sound wave. The photoreceiver is configured to receive the laser reflected by the bonding wire and output a signal corresponding to the received laser. The processing circuit is configured to detect a bonding failure of the bonding wire based on the signal output by the photoreceiver.

A method of determining a bonding status between wire and at least one bonding location of a semiconductor device is provided. The method includes the steps of: (a) bonding a portion of wire to at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a predetermined height range, thereby determining if the portion of wire is bonded to the at least one bonding location.

A height of a vertical wire interconnection bonded onto a substrate is measured by first capturing a top view of the vertical wire interconnection and identifying a position of a tip end of the vertical wire interconnection from the top view. A conductive probe is located over the tip end of the vertical wire interconnection, and is lowered towards the vertical wire interconnection until an electrical connection is made between the conductive probe and the tip end of the vertical wire interconnection. A contact height at which the electrical connection is made may thus be determined, wherein the contact height corresponds to the height of the vertical wire interconnection.

A method of determining a bonding status between wire and at least one bonding location of a semiconductor device is provided. The method includes the steps of: (a) bonding a portion of wire to at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a predetermined height range, thereby determining if the portion of wire is bonded to the at least one bonding location.

A semiconductor device inspection device includes a semiconductor device stage, a sound wave generator, a laser emitter, a photoreceiver, and a processing circuit. The sound wave generator is configured to generate a sound wave having a natural frequency of a bonding wire included in a semiconductor device placed on the semiconductor device stage. The laser emitter is configured to direct laser toward the bonding wire while the sound wave generator generates the sound wave. The photoreceiver is configured to receive the laser reflected by the bonding wire and output a signal corresponding to the received laser. The processing circuit is configured to detect a bonding failure of the bonding wire based on the signal output by the photoreceiver.