A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

A PTFE sheet in which PTFE fibers having a diameter of 1 μm or less are spun, the PTFE sheet having a Gurley value in the range of 1 s/100 cc/in.sup.2 to 3 s/100 cc/in.sup.2 and a shrinkage factor in a direction orthogonal to a sheet winding direction of no more than 10% when heated to 300° C. The PTFE sheet makes a die adsorbable via a tool, which is for heating the die when the die is mounted on a mounting body, by being sandwiched between the die and the tool, and suppresses the adhesion, to an adsorption surface of the tool or to the die, of an adhesion member for fixing the die to the mounted body. Through this configuration, a PTFE sheet capable of stabilizing vacuum adsorption and improving maintainability and a method for mounting a die are provided.

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

A semiconductor package including: a redistribution layer including redistribution line patterns, redistribution vias connected to the redistribution line patterns, and a redistribution insulating layer surrounding the redistribution line patterns and the redistribution vias; semiconductor chips including at least one upper semiconductor chip disposed on a lowermost semiconductor chip of the semiconductor chips, wherein the at least one upper semiconductor chip is thicker than the lowermost semiconductor chip; bonding wires each having a first end and a second end, wherein the bonding wires connect the semiconductor chips to the redistribution layer, wherein the first end of each of the bonding wires is connected to a respective chip pad of the semiconductor chips and the second end of each of the bonding wires is connected to a respective one of the redistribution line patterns; and a molding member surrounding, on the redistribution layer, the semiconductor chips and the bonding wires.

A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.

A lead frame includes: a frame body; a plurality of leads individually projecting from the frame body; and a recess formed across one surfaces of the leads adjacent to each other with the frame body therebetween, the recess including a first recess, and a second recess partially overlapping the first recess in a bottom surface thereof and having a smaller depth than the first recess.

A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.

A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

In one example, a system comprises a laser assisted bonding (LAB) tool. The LAB tool comprises a stage block and a first lateral laser source facing the stage block from a lateral side of the stage block. The stage block is configured to support a substrate and a first electronic component coupled with the substrate, and the first electronic component comprises a first interconnect. The first lateral laser source is configured to emit a first lateral laser beam laterally toward the stage block to induce a first heat on the first interconnect to bond the first interconnect with the substrate. Other examples and related methods are also disclosed herein.

A package structure includes a redistribution layer, a chip assembly, a plurality of solder balls, and a molding compound. The redistribution layer includes redistribution circuits, photoimageable dielectric layers, conductive through holes, and chip pads. One of the photoimageable dielectric layers located on opposite two outermost sides has an upper surface and openings. The chip pads are located on the upper surface and are electrically connected to the redistribution circuits through the conductive through holes. The openings expose portions of the redistribution circuits to define solder ball pads. Line widths and line spacings of the redistribution circuits decrease in a direction from the solder ball pads towards the chip pads. The chip assembly is disposed on the chip pads and includes at least two chips with different sizes. The solder balls are disposed on the solder ball pads, and the molding compound at least covers the chip assembly.