A semiconductor package includes: a first semiconductor chip including a first surface and a second surface opposite to each other and including first through electrodes; at least a second semiconductor chip stacked on the first surface of the first semiconductor chip and comprising second through electrodes electrically connected to the first through electrodes; and a molding layer contacting the first surface of the first semiconductor chip and a side wall of the at least one second semiconductor chip and including a first external side wall connected to and on the same plane as a side wall of the first semiconductor chip, wherein the first external side wall of the molding layer extends to be inclined with respect to a first direction orthogonal to the first surface of the first semiconductor chip, and both the external first side wall of the molding layer and the side wall of the first semiconductor chip have a first slope that is the same for both the first external side wall of the molding layer and the side wall of the first semiconductor chip.

A semiconductor device has a leadframe and a first electrical component including a first surface disposed on the leadframe. A first clip bond is disposed over a second surface of the first electrical component. The first clip bond extends vertically through the semiconductor device. The first clip bond has a vertical member, horizontal member connected to the vertical member, die contact integrated with the horizontal member, and clip foot extending from the vertical member. A second electrical component has a first surface disposed on the first clip bond. A second clip bond is disposed over a second surface of the second electrical component opposite the first surface of the second electrical component. An encapsulant is deposited around the first electrical component and first clip bond. A second electrical component is disposed over the encapsulant. The clip foot is exposed from the encapsulant.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

Provided is a semiconductor package including: at least one semiconductor device on a first substrate; a non-conductive film (NCF) on the at least one semiconductor device and comprising an irreversible thermochromic pigment; and a molding member on the at least one semiconductor device in a lateral direction, wherein a content of the irreversible thermochromic pigment in the NCF is about 0.1 wt % to about 5 wt % with respect to a weight of the NCF.

A method for removing devices from a substrate using a supporting plate. One or more bars comprised of semiconductor layers are formed on a substrate, and one or more device structures are formed on the bars. At least one supporting plate is bonded to the bars, and stress is applied to the supporting plate to remove the bars from the substrate. The supporting plate is used to divide the bars into one or more device units after the bars are removed from the substrate, wherein the device units are packaged and arranged into one or more modules. The supporting plate may also be used to make a cleavage facet for one or more of the device structures after the bars are removed from the substrate.

In various embodiments, the present disclosure provides semiconductor packages, devices, and methods. In one embodiment, a device includes a die pad, leads that are spaced apart from the die pad, and a semiconductor die on the die pad. The semiconductor die has a first surface and a second surface opposite the first surface. The second surface faces the die pad. An encapsulant is provided on the semiconductor die, the die pad and the leads, and the encapsulant has a first surface opposite the die pad and the leads, and a second surface opposite the first surface. The second surface of the encapsulant extends between the die pad and an adjacent lead. The second surface of the encapsulant is spaced apart from the first surface of the encapsulant by a first distance, and an exposed surface of the die pad is spaced apart from the first surface of the encapsulant by a second distance that is greater than the first distance.

In this mounting device (10) for mounting a semiconductor chip (100) on a substrate (104), a controller (50) is provided with: a mounter for pressing the semiconductor chip (100) to the substrate (104) in a state where a cover film (110) is interposed between the semiconductor chip (100) and a thermocompression tool (16), and for heating and then cooling the thermocompression tool (16) to mount the semiconductor chip (100) on the substrate (104); and a separator for heating the thermocompression tool (16) after the semiconductor chip (100) has been mounted, and for raising a mounting head (17) to be separated from the cover film (110).

A wafer system-level fan-out packaging structure and a manufacturing method. The method includes: forming a redistribution layer, where the redistribution layer includes a first surface and an opposite second surface; providing a patch element, and bonding the patch element to the second surface; providing a die having a bump disposed on a front side, and bonding the front side of the die to the second surface of the redistribution layer through the bump; and forming a plastic packaging layer on the second surface of the redistribution layer, where the plastic packaging layer covers the patch element, back side and side surfaces of the die. In the wafer system-level fan-out packaging structure and the manufacturing method of the present disclosure, the die and the patch element are packaged in a plastic packaging layer, and the die and the patch element are connected and let out by the redistribution layer.

A semiconductor package includes a package substrate, an interposer on the package substrate, a plurality of semiconductor devices on the interposer and spaced apart from each other, the semiconductor devices being electrically connected to the interposer, a dam structure on the interposer extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices, and a stress relief on the interposer, the stress relief including an elastic member that fills gaps between the semiconductor devices and the dam structure.

A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.