A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.