H01L2224/832

METHOD FOR TRANSIENT LIQUID-PHASE BONDING BETWEEN METAL MATERIALS USING A MAGNETIC FORCE

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

METHOD FOR TRANSIENT LIQUID-PHASE BONDING BETWEEN METAL MATERIALS USING A MAGNETIC FORCE

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
10847497 · 2020-11-24 · ·

A mounting apparatus of a chip including a mechanism configured to arrange a front surface of a chip and a front surface of a substrate to face each other such that a back surface of the chip is attached to a sheet, the sheet having a first portion corresponding to the selected chip and a the second portion arranged at a periphery of the first portion corresponding to the selected chip in the sheet when seen in a direction perpendicular to the front surface of the substrate; a holding mechanism moving in a direction that is not perpendicular to the front surface of the substrate and arranged to hold the second portion of the sheet; and a pushing mechanism for pushing the back surface of the chip through the first portion of the sheet so that the front surface of the chip is brought close to the front surface of the substrate with the first portion deformed in a state where the second portion is held by the holding mechanism, and configured to release the pushing mechanism from the first portion of the sheet to strip the sheet from the back surface of the chip.

MANUFACTURING METHOD OF POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR DEVICE, AND POWER CONVERTER
20200235072 · 2020-07-23 · ·

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

MANUFACTURING METHOD OF POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR DEVICE, AND POWER CONVERTER
20200235072 · 2020-07-23 · ·

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

METAL PASTE FOR JOINTS, ASSEMBLY, PRODUCTION METHOD FOR ASSEMBLY, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

METAL PASTE FOR JOINTS, ASSEMBLY, PRODUCTION METHOD FOR ASSEMBLY, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

BONDING METHOD OF SEMICONDUCTOR CHIP AND BONDING APPARATUS OF SEMICONDUCTOR CHIP
20200051953 · 2020-02-13 · ·

A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.

Systems of bonded substrates and methods for bonding substrates with bonding layers

A system of bonded substrates may include a first substrate, a second substrate, and a bonding layer. The first substrate may include a bonding surface, wherein a geometry of the bonding surface of the first substrate includes a plurality of microchannels. The second substrate may include a complementary bonding surface. The bonding layer may be positioned between the first substrate and the second substrate, wherein the bonding layer may fill the microchannels of the first substrate and may contact substantially the entire bonding surface of the first substrate. The bonding layer may include a metal.

Chip structure and manufacturing method thereof
11935859 · 2024-03-19 · ·

A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.