Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

A mounting method of an electronic device includes providing an electronic device which includes a semiconductor chip body including an upper surface, a lower surface opposite to the upper surface, and side surfaces connecting the upper surface and the lower surface, a plurality of bumps disposed on the lower surface, and an under-fill element disposed on at least one side surface. The method further includes mounting the electronic device on a printed circuit board including connecting pads formed thereon. The bumps of the semiconductor chip body are connected to the connecting pads. The method additionally includes heating the under-fill element to a predetermined temperature to form an under-fill layer between the lower surface of the semiconductor chip body and the printed circuit board.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

An electronic sub-assembly (36) comprising at least one electronic component (14) embedded in a sequence of layers, wherein the electronic component (14) is arranged in a recess of an electrically conductive central layer (16) and directly adjoins a resin layer (12, 20) on each side.

A nickel particle composition is shown, including: A) a nickel particle having an average particle size in the range of 0.5 m to 20 m obtained via a laser diffraction/scattering method and containing 50 wt % or more of a nickel element; B) a nickel fine particle having an average primary particle size in the range of 30 nm to 200 nm observed via a scanning electron microscope and containing 50 wt % or more of a nickel element; and C) an organic binder in the range of 0.1 wt % to 2.5 wt % relative to the total metal content; and the weight ratio of a component A to a component B (component A:component B) is in the range of 30:70 to 70:30.

Embodiments of the present disclosure provide techniques and configurations for a computing system with a thermal interface having magnetic particles. In some embodiments, the computing system may include a first part, a second part, and a thermal interface to couple the first and second parts. The thermal interface may comprise a thermal interface material having magnetic particles that are aligned in a defined direction relative to a surface of the first or second part, to provide desired thermal conductivity between the first and second parts. The defined direction of alignment of magnetic particles may comprise an alignment of the particles substantially perpendicularly to the surface of the first or second part. Other embodiments may be described and/or claimed.

A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

The disclosure is directed to an integrated circuit stack and method of forming the same. In one embodiment, the integrated circuit stack may include: a plurality of vertically stacked wafers, each wafer including a back side and a front side, the back side of each wafer including a through-semiconductor-via (TSV) within a substrate, and the front side of each wafer including a metal line within a first dielectric, wherein the metal line is connected with the TSV within each wafer; and an inorganic dielectric interposed between adjacent wafers within the plurality of vertically stacked wafer; wherein the plurality of vertically stacked wafers are stacked in a front-to-back orientation such that the TSV on the back side of one wafer is electrically connected to the metal line on the front side of an adjacent wafer by extending through the inorganic dielectric interposed therebetween.

A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.