H01L2224/838

Electrical connecting structure having nano-twins copper and method of forming the same

Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

Electrical connecting structure having nano-twins copper and method of forming the same

Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

Connection structure
11133279 · 2021-09-28 · ·

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

Positioning device

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

Contact Pad for Semiconductor Device

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.

Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
11018112 · 2021-05-25 · ·

A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.

CHIP BONDING METHOD AND BONDING DEVICE

A chip bonding method and a bonding device. The chip bonding method is used for bonding a chip to a display module, the display module includes a substrate and a functional layer on the substrate, the substrate includes a first substrate portion and a second substrate portion, the functional layer is on the first substrate portion, and an electrode is on an upper side of the second substrate portion. The chip bonding method includes: forming a light absorbing film layer on a side of the second substrate portion facing away from the electrode; coating a conductive adhesive film on the electrode, and placing the chip on the conductive adhesive film; and irradiating, by using a laser beam, a side of the second substrate portion facing away from the electrode.

Optical device layer transferring method
11011670 · 2021-05-18 · ·

A transferring method of transferring a plurality of optical device layers includes a transfer member bonding step, a buffer layer breaking step, a first optical device layer transferring step, an adhesive removing step, and a second optical device layer transferring step. In the transfer member bonding step, an optical device wafer and a transfer member are bonded to each other through an adhesive, and each spacing between adjacent ones of the optical device layers of the optical device wafer which each have been divided in a chip size is filled with the adhesive. In the adhesive removing step, at least part of the adhesive with which each spacing between the adjacent ones of the optical device layers has been filled is removed such that the optical device layers which have been embedded in an adhesive layer in the transfer member bonding step project from the adhesive layer.

Optical device layer transferring method
11011670 · 2021-05-18 · ·

A transferring method of transferring a plurality of optical device layers includes a transfer member bonding step, a buffer layer breaking step, a first optical device layer transferring step, an adhesive removing step, and a second optical device layer transferring step. In the transfer member bonding step, an optical device wafer and a transfer member are bonded to each other through an adhesive, and each spacing between adjacent ones of the optical device layers of the optical device wafer which each have been divided in a chip size is filled with the adhesive. In the adhesive removing step, at least part of the adhesive with which each spacing between the adjacent ones of the optical device layers has been filled is removed such that the optical device layers which have been embedded in an adhesive layer in the transfer member bonding step project from the adhesive layer.

Contact pad for semiconductor device

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.