Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

A printed circuit film includes: a base film including a first film portion extending in a first direction, a second film portion extending in the first direction, and a third film portion extending in the first direction; a plurality of lead wires extending in the second direction and disposed on the first, second, and third film portions, the plurality of lead wires being spaced apart from each other in the first direction; and a bonding member including: a conductive member disposed to overlap the plurality of lead wires on the first film portion; a first non-conductive member disposed to overlap the plurality of lead wires and the second film portion; and a second non-conductive member disposed to overlap the plurality of lead wires and the third film portion, wherein the conductive member is disposed between the first non-conductive member and the second non-conductive member in the second direction.

A method of manufacturing a light source device includes: disposing bumps containing a first metal on a first substrate which is thermally conductive; disposing a bonding member on the bumps, the bonding member containing Au—Sn alloy; disposing a light emitting element on the bumps and the bonding member; and heating the first substrate equipped with the bumps, the bonding member, and the light emitting element.

A method of manufacturing a light source device includes: disposing bumps containing a first metal on a first substrate which is thermally conductive; disposing a bonding member on the bumps, the bonding member containing Au—Sn alloy; disposing a light emitting element on the bumps and the bonding member; and heating the first substrate equipped with the bumps, the bonding member, and the light emitting element.

In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

A method of fabricating a printed circuit film including the steps of preparing a base film, and a plurality of lead wires disposed on the base film, the plurality of lead wires spaced apart from each other in a first direction and extending in a second direction intersecting the first direction, and forming a bonding member including a conductive member disposed to overlap a central portion of each of the plurality of lead wires, a first non-conductive member disposed to overlap a first portion of the plurality of lead wires in the second direction, and a second non-conductive member disposed to overlap a second portion of the plurality of lead wires in the second direction.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.