A method for inserting a wire into a longitudinal groove of a semiconductor chip for the assembly thereof, the groove containing a pad made of a bonding material having a set melting point, the method comprises: in a positioning step, placing a longitudinal section of the wire along the groove, in forced abutment against the pad; and, in an insertion step, exposing a zone containing at least one portion of the pad to a processing temperature higher than the melting point of the bonding material and for a sufficient time to make the pad at least partially melt, and causing the wire to be inserted into the groove. The present disclosure also relates to a piece of equipment allowing the insertion method to be implemented.

The invention relates to a method for producing a power module, comprising: providing an insulating substrate, composed of a first metal layer, a second metal layer, and an insulating layer placed between the first metal layer and second metal layer; formation of numerous contact wires located on a first side of the insulating substrate facing away from the second metal layer and on a second side of the insulating substrate facing away from the first metal layer; applying an electrically conductive layer to the first side, which comes in contact with numerous power switches, and applying a heatsink to the second side.

Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

A system includes a substrate; a bond pad; a wire spanning above the substrate, having a first end bonded to the bond pad and a second end extending from the bond pad to terminate in a second end thereof; and a support structure disposed on the substrate, the support structure comprising at least a side wall and extending from the substrate to terminate in an end portion spaced from the substrate to support the wire.

An electronic device includes a package structure, a lead, a heat slug, a semiconductor die, and a bond wire. The package structure has opposite first and second sides, and opposite third and fourth sides spaced along a first direction. The heat slug has a first portion partially exposed outside the second side of the package structure, and a second portion with slots extending inwardly along the first direction and fins between respective pairs of the slots, where the fins are enclosed by the package structure and spaced along an orthogonal second direction. The semiconductor die is attached to the heat slug, and the bond wire has a first end connected to the lead and a second end connected to a circuit of the semiconductor die.

A semiconductor package including a chip stack, at least one conductive wire, a first insulating encapsulant, a second insulating encapsulant, and a redistribution layer is provided, and a manufacturing method thereof is also provided. The chip stack includes semiconductor chips stacked on top of each other. Each semiconductor chip has an active surface that has at least one bonding region, and each bonding region is exposed by the chip stack. The conductive wire is correspondingly disposed on the bonding region. The first insulating encapsulant encapsulates the bonding region and the conductive wire. At least a portion of each conductive wire is exposed from the first insulating encapsulant. The second insulating encapsulant encapsulates the chip stack and the first insulating encapsulant. The first insulating encapsulant is exposed from the second insulating encapsulant. The redistribution layer is disposed on the first and second insulating encapsulant and electrically coupled to the conductive wire.

A light-emitting substrate, a method of manufacturing a light-emitting substrate, and a display device are provided. The light-emitting substrate includes: a first substrate, wherein the first substrate includes a first base substrate, a light-emitting diode arranged on the first base substrate, and a first conductive pad arranged on the first base substrate; a second substrate arranged opposite to the first substrate, wherein the second substrate includes a second base substrate, and a second conductive pad arranged on the second base substrate; and a bonding wire structure including a bonding wire, wherein the first conductive pad is located on a surface of the first substrate away from the second substrate, the second conductive pad is located on a surface of the second substrate away from the first substrate, and the bonding wire is configured to electrically connect the first conductive pad and the second conductive pad.

Semiconductor packages with electromagnetic interference supported stacked die and a method of manufacture therefor is disclosed. The semiconductor packages may house a stack of dies in a system in a package (SiP) implementation, where one or more of the dies may be wire bonded to a semiconductor package substrate. The dies may be stacked in a partially overlapping, and staggered manner, such that portions of some dies may protrude out over an edge of a die that is below it. This dies stacking may define a cavity, and in some cases, wire bonds may be made to the protruding portions of the die. Underfill material may be provided in the cavity and cured to form an underfill support. Wire bonding of the bond pads overlying the cavity formed by the staggered stacking of the dies may be performed after the formation of the underfill support.

Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A conductive structure is disposed on the conductive pad, and a passive device is also disposed on the conductive pad, wherein the passive device has a first portion located above the second passivation layer and a second portion passing through the second passivation layer. A solderability preservative film covers the first portion of the passive device, and an under bump metallurgy (UBM) layer covers the second portion of the passive device and a portion of the conductive structure.