The present disclosure provides a semiconductor package structure, a fabricating method thereof, and a memory system. The fabricating method comprises: providing an initial semiconductor package structure comprising: an initial substrate, a die device on the initial substrate and electrically connected with the initial substrate, and an initial package layer on the initial substrate and covers the die device; removing the initial substrate to obtain a die package device including the die device and at least a portion of the initial package layer; attaching a package substrate on the die device and electrically connecting the die device with the package substrate; and forming a first package layer on the package substrate to cover the die package device.

A light-emitting substrate is provided, including first and second substrates opposite to each other, and a bonding wire structure including a bonding wire. The first substrate includes: a first base substrate and a first conductive pad. The second substrate includes a second base substrate and a second conductive pad. The first conductive pad is on a surface of the first substrate away from the second substrate, the second conductive pad is on a surface of the second substrate away from the first substrate. The bonding wire is soldered to the first conductive pad at a first solder joint and to the second conductive pad at a second solder joint. The bonding wire includes, at each of the first solder joint and the second solder joint, a portion having an angle with a plane where the first base substrate is located and/or having a curved arc.

Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

The present invention relates to an electrical assembly which has a conformal coating, wherein said conformal coating is obtainable by a method which comprises: (a) plasma polymerization of a compound of formula (I) and a fluorohydrocarbon, wherein the molar ratio of the compound of formula (I) to the fluorohydrocarbon is from 5:95 to 50:50, and deposition of the resulting polymer onto at least one surface of the electrical assembly: wherein: R.sub.1 represents C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.2 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.3 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.4 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; R.sub.5 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; and R.sub.6 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl, and (b) plasma polymerization of a compound of formula (I) and deposition of the resulting polymer onto the polymer formed in step (a). ##STR00001##

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.

A semiconductor package includes a package substrate, at least one dam structure extending on the package substrate to surround substrate pads and defining an inner space that accommodates the substrate pads on the package substrate, a first semiconductor on the package substrate, a second semiconductor chip attached to the first semiconductor chip by an adhesive film, bonding wires electrically connecting chip pads of the second semiconductor chip to the substrate pads of the package substrate, a first underfill member filling a gap between the package substrate and the first semiconductor chip, a second underfill member filling the inner space of the at least one dam structure, and a molding member covering the first semiconductor chip, the second semiconductor chip and the first and second underfill members on the package substrate.

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A conductive structure is disposed on the conductive pad, and a passive device is also disposed on the conductive pad, wherein the passive device has a first portion located above the second passivation layer and a second portion passing through the second passivation layer. A solderability preservative film covers the first portion of the passive device, and an under bump metallurgy (UBM) layer covers the second portion of the passive device and a portion of the conductive structure.

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive pad, passing through the second passivation layer. An organic solderability preservative film covers the passive device.

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.