H01L2224/951

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
20220230989 · 2022-07-21 · ·

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

MICRO-COMPONENT ANTI-STICTION STRUCTURES
20210375795 · 2021-12-02 ·

A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.

ELECTRONIC DEVICE HAVING A SOLDERED JOINT BETWEEN A METAL REGION OF A SEMICONDUCTOR DIE AND A METAL REGION OF A SUBSTRATE
20210375824 · 2021-12-02 ·

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

WET ALIGNMENT METHOD FOR MICRO-SEMICONDUCTOR CHIP AND DISPLAY TRANSFER STRUCTURE

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

WET ALIGNMENT METHOD FOR MICRO-SEMICONDUCTOR CHIP AND DISPLAY TRANSFER STRUCTURE

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

Wet alignment method for micro-semiconductor chip and display transfer structure

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

Wet alignment method for micro-semiconductor chip and display transfer structure

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

WET ALIGNMENT METHOD FOR MICRO-SEMICONDUCTOR CHIP AND DISPLAY TRANSFER STRUCTURE

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

WET ALIGNMENT METHOD FOR MICRO-SEMICONDUCTOR CHIP AND DISPLAY TRANSFER STRUCTURE

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

Mass transfer device and mass transfer method
20210351154 · 2021-11-11 ·

Provided are a mass transfer device and a mass transfer method. The mass transfer device is provided with multiple channels, a first opening of each channel is arranged on a first surface of the mass transfer device, a second opening of each channel is arranged on a second surface of the mass transfer device, and the distances between the channels are gradually increased along a direction from the first surface to the second surface. In the provided mass transfer method, through a laser irradiation mode, the Micro-LEDs are separated from the first substrate and enter the channels of the mass transfer device through the first openings, and falling into Micro-LED to-be-installed positions on a second substrate through the second openings of the channels, thereby transferring the Micro-LEDs from the first substrate to the second substrate.