A package structure is provided. The package structure includes a first package component mounted on a substrate, a lid structure disposed on the substrate and around the first package component, and a thermal interface material vertically sandwiched between the plurality of integrated circuit dies of the first package component and the lid structure. The first package component includes a plurality of integrated circuit dies and an underfill formed between the integrated circuit dies. The lid structure covers the integrated circuit dies and exposes the underfill. A first portion and a second portion of the thermal interface material are laterally separated from each other, and a space between the first portion and the second portion is exposed from the lid structure.

Provided are devices and methods for forming devices. A device includes a workpiece; a thermal interface material (TIM) disposed over the workpiece; and a lid disposed over the workpiece, wherein the lid has an underside formed with a trench, and wherein a vertically extending portion of the TIM extends into the trench and a base portion of the TIM is located outside of the trench.

A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

A package assembly includes a package substrate, a package lid located on the package substrate and including a plate portion, an outer foot extending from the plate portion, and an inner foot having a height greater than or equal to a height of the outer foot, extending from the plate portion and including a first inner foot corner portion located inside a first corner of the outer foot, and an adhesive that adheres the outer foot to the package substrate and adheres the inner foot to the package substrate.

A device includes a semiconductor die bonded to an integrated circuit die, wherein the integrated circuit die includes a first interconnect structure that has a metal density of at least 50%, a first redistribution structure having a metal density of at least 50%, wherein the first interconnect structure is bonded to the first redistribution structure, and a composite heat dissipation material between a bottom surface of the first interconnect structure and a top surface of the first redistribution structure.

A package assembly includes a package substrate, an interposer module on the package substrate, and a package lid on the interposer module and attached to the package substrate. The package lid includes an outer lid including an outer lid material and including an outer lid plate portion. The package lid further includes an inner lid including an inner lid material different than the outer lid material and including an inner lid plate portion attached to a bottom surface of the outer lid plate portion.

An electronic package with a battery and method for producing the electronic package uses a domed lid that is attached to a substrate with an electronic component, such as a die. The battery is attached to an inner surface of the domed lid and electrically connected to the electronic component via the domed lid.

A semiconductor device including a package, a lid and a thermal interface material is provided. The package includes a packaging substrate, semiconductor dies and an insulating encapsulation, wherein the semiconductor dies are disposed on and electrically connected to the packaging substrate, and the insulating encapsulation encapsulates the semiconductor dies. The lid is disposed on the packaging substrate, the lid includes a cover portion and foot portion extending from the cover portion to the packaging substrate, wherein the cover portion covers the semiconductor dies and the insulating encapsulation, the foot portion includes foot segments laterally spaced apart from one another, and the foot segments are attached to the packaging substrate. The cover portion of the lid is attached to the package through the thermal interface material.

A method of forming a semiconductor package structure is provided. The method includes disposing a first semiconductor device on an interposer substrate, disposing the interposer substrate on a carrier substrate, applying a thermal interface material on the first semiconductor device, and attaching a lid on the carrier substrate to cover the first semiconductor device. The interposer substrate is disposed between the carrier substrate and the first semiconductor device. The lid includes a lower surface having a first recess facing the first semiconductor device, and a portion of the thermal interface material is accommodated in the first recess.

An electrical device that includes a stacked semiconductor device structure connected to a device substrate through a sidewall interconnect. The sidewall interconnect of the stacked semiconductor device structure is in contact with metal lines extending from a sidewall of the stacked semiconductor device structure to semiconductor devices positioned within an interior the stacked semiconductor device structure. The electrical device includes a heat spreader connected to the stacked semiconductor structure.