A method includes depositing a first metal layer on a package component, wherein the package component comprises a first device die, forming a dielectric layer on the package component, and plating a metal thermal interface material on the first metal layer. The dielectric layer includes portions on opposing sides of the metal thermal interface material. A heat sink is bonded on the metal thermal interface material. The heat sink includes a second metal layer physically joined to the metal thermal interface material.

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.

A ring structure on a package substrate is divided into at least four different components, including a plurality of first pieces and a plurality of second pieces. By dividing the ring structure into at least four different components, the ring structure reduces flexibility of the package substrate, which thus reduces stress on a molding compound (e.g., in a range from approximately 1% to approximately 10%). As a result, molding cracking is reduced, which reduces defect rates and increases yield. Accordingly, raw materials, power, and processing resources are conserved that would otherwise be consumed with manufacturing additional packages when defect rates are higher.

A disclosed semiconductor structure may include an interposer, a first semiconductor die electrically coupled to the interposer, a packaging substrate electrically coupled to the interposer, and a capping layer covering one or more of a first surface of the first semiconductor die and a second surface of the packaging substrate. The capping layer may be formed over respective surfaces of each of the first semiconductor die and the packaging substrate. In certain embodiments, the capping layer may be formed only on the first surface of the first semiconductor die and not formed over the package substrate. In further embodiments, the semiconductor structure may include a second semiconductor die, such that the capping layer covers a surface of only one of the first semiconductor die and the second semiconductor die. The semiconductor structure may include a molding compound die frame that is partially or completely covered by the capping layer.

A device includes a semiconductor die bonded to an integrated circuit die, wherein the integrated circuit die includes a first interconnect structure that has a metal density of at least 50%, a first redistribution structure having a metal density of at least 50%, wherein the first interconnect structure is bonded to the first redistribution structure, and a composite heat dissipation material between a bottom surface of the first interconnect structure and a top surface of the first redistribution structure.

A semiconductor device has a substrate and electrical component disposed over the substrate. The electrical component can be a semiconductor die, semiconductor package, surface mount device, RF component, discrete electrical device, or IPD. A TIM is deposited over the electrical component. The TIM has a core, such as Cu, covered by graphene. A heat sink is disposed over the TIM, electrical component, and substrate. The TIM is printed on the electrical component. The graphene is interconnected within the TIM to form a thermal path from a first surface of the TIM to a second surface of the TIM opposite the first surface of the TIM. The TIM has thermoset material or soldering type matrix and the core covered by graphene is embedded within the thermoset material or soldering type matrix. A metal layer can be formed between the TIM and electrical component.

Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes a package component with one or more integrated circuits adhered to a package substrate, a hybrid thermal interface material utilizing a combination of polymer based material with high elongation values and metal based material with high thermal conductivity values. The polymer based thermal interface material placed on the edge of the package component contains the metal based thermal interface material in liquid form.

A power semiconductor module includes: a substrate with a metallization layer attached to a dielectric insulation layer and a semiconductor body mounted to the metallization layer; a housing at least partly enclosing the substrate and having sidewalls and a cover that at least partly covers an opening formed by the sidewalls and has a flexible portion; and a press-on pin having arranged on the substrate or semiconductor body. A first end of the press-on pin faces the substrate or semiconductor body and extends towards the cover such that a second end of the press-on pin contacts the flexible portion of the cover. The substrate in an area vertically below the press-on pin has a first spring constant k.sub.1 in a vertical direction that is perpendicular to a top surface of the substrate. The flexible portion of the cover has a second spring constant k.sub.2, where 0.5*k.sub.1k.sub.25*k.sub.1.

A semiconductor device has a substrate and a semiconductor package disposed over the substrate. An embedded bar (e-bar) substrate is disposed on the substrate around the semiconductor package. A heat sink is formed over the semiconductor package and supported by the e-bar substrate to elevate the heat sink from the substrate and reduce a thickness of the heat sink. A thermal interface material is deposited between the semiconductor package and heat sink. Alternatively, a shield layer can be formed over the semiconductor package and supported by the e-bar substrate. The e-bar substrate has a base layer and a first metal layer formed over a first surface of the base layer. A bump is formed over the first metal layer. A second metal layer can be over a second surface of the base layer opposite the first surface of the base layer. Two or more e-bar substrates can be stacked.