A stacked, multi-layer transmission line is provided. The stacked transmission line includes at least a pair of conductive traces, each conductive trace having a plurality of conductive stubs electrically coupled thereto. The stubs are disposed in one or more separate spatial layers from the conductive traces.

Aspects of coaxial to microstrip transitional housings are described. In one example, a transitional housing includes a channel comprising sidewalls formed into the housing, and an opening formed at an end of the channel. The transitional housing also includes a plug that is fitted into the opening at an end of the channel. The plug has a flat surface positioned at the end of the channel, extending between the sidewalls of the channel, and an undercut below the flat surface. The transitional housing also includes a coaxial conductor aperture that extends from outside the housing, into the housing, into the plug, through the flat surface and undercut of the plug, and into the channel. Use of the plug offers a manufacturing solution for the mechanical and electrical transition between a coaxial feedthrough to a PCB microstrip secured within the housing. The solution helps to eliminate unwanted mismatches of the transition.

A circuit assembly for cooling a quantum electrical device, use of said circuit assembly, a system and a method for cooling a quantum electric device are provided. The circuit assembly comprises a quantum electric device to be cooled, at least one normal-metal-insulator-superconductor (NIS) tunnel junction electrically connected to the quantum electric device and at least one superconductive lead for supplying a drive voltage V.sub.QCR for said at least one NIS tunnel junction. The quantum electric device is cooled when the voltage V.sub.QCR is supplied to at least one NIS tunnel junction, said voltage V.sub.QCR being equal to or below the voltage NΔ/e, where N=1 or N=2, N is the number of NIS tunnel junctions electrically coupled in series with the means for generating the voltage, Δ is the energy gap in the superconductor density of states, and e is the elementary charge.

A feeding device is disclosed. The feeding device includes a body and at least one first port, the body includes at least one first contour port, and each of the at least one first contour port corresponds to one of the at least one first port; and the first contour port includes at least two sub-ports, and the at least two sub-ports of the first contour port are connected, by using at least one power splitter, to the first port corresponding to the first contour port. In the foregoing implementation solution, the first contour port is divided into several sub-ports, and the first port and the several sub-ports are connected by using the at least one power splitter.

The present invention discloses a metamaterial-based variable capacitor structure, comprising the first substrate, the second substrate, the metamaterial dielectric layer, the metal floor layer between the first substrate and the metamaterial dielectric layer, the gaps and isolation holes periodically arranged on metal floor layer, the microstrip line between the second substrate and the metamaterial dielectric layer, the periodically loaded branches, the bias line and the choke branch on the microstrip line, and two feeding terminals on both ends of microstrip line. The capacitance value of the metamaterial-based capacitor with variable dielectric constant is adjusted by controlling the voltage applied to the said bias line, thereby realizing the time-frequency response, frequency selection, phase shift control, transmission matching, etc. based on the variable capacitor structure.

A transition structure for millimeter wave is provided. The transition structure includes a first layer signal element coupled to an end of a first transmission line and a plurality of first layer ground elements surrounding the end of the first transmission line equidistantly from the end of the first transmission line and disposed along two opposite sides of a strip body of the first transmission line equidistantly from the strip body of the first transmission line. The transition structure further includes an intermediate layer signal element coupled to the first layer signal element and a plurality of intermediate layer ground elements surrounding the intermediate layer signal element quasi-coaxially. A multilayer transition structure including a multilayer structure and the transition structure is also provided. Therefore, the problem of operating frequency caused by the thickness of the multilayer structure can be overcome, thereby increasing the resonance frequency of the multilayer structure.

An antenna package includes an antenna device including an antenna dielectric layer and an antenna unit formed on the antenna dielectric layer, and an intermediate circuit board electrically connected to the antenna unit. The intermediate circuit board includes a core layer and a signal line formed on a surface of the core layer and electrically connected to the antenna unit. A width of one end portion of the signal line connected to the antenna unit is smaller than a width of the other end portion opposite to the one end portion of the signal line. Impedance mismatching is prevented by the construction of the signal line to improve antenna properties.

The present invention discloses a metamaterial-based variable capacitor structure, comprising the first substrate, the second substrate, the metamaterial dielectric layer, the metal floor layer between the first substrate and the metamaterial dielectric layer, the gaps and isolation holes periodically arranged on metal floor layer, the microstrip line between the second substrate and the metamaterial dielectric layer, the periodically loaded branches, the bias line and the choke branch on the microstrip line, and two feeding terminals on both ends of microstrip line. The capacitance value of the metamaterial-based capacitor with variable dielectric constant is adjusted by controlling the voltage applied to the said bias line, thereby realizing the time-frequency response, frequency selection, phase shift control, transmission matching, etc. based on the variable capacitor structure.

A waveguide structure includes a dielectric layer, a plurality of circuit layers, a plurality of insulation layers, and a conductor connection layer. The dielectric layer has an opening. The circuit layers are disposed on the dielectric layer. The insulation layers and the circuit layers are alternately stacked. The conductor connection layer covers an outer wall of the opening in a direction perpendicular to the circuit layers and connects at least two circuit layers on two opposite sides of the opening. At least the conductor connection layer and a part of the circuit layers define an air cavity for transmitting signals at a position corresponding to the opening.

Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.