Good femtosecond fiber laser performance is achieved by producing picosecond Raman shifted pulses of sufficient intensity to undergo self-phase modulation (SPM), thus causing the pulses to advantageously spread spectrally, which then makes it possible to temporally compress the pulses with an optical compressor to produce femtosecond pulses with high peak power.

A pulse laser apparatus (100) for creating laser pulses (1), in particular soliton laser pulses (1), based on Kerr lens mode locking of a circulating light field in an oscillator cavity (10), comprises at least two resonator mirrors (11, 12, . . . ) spanning a resonator beam path (2) of the oscillator cavity (10), at least one Kerr-medium (21, 22, 23) for introducing self-phase modulation and self-focusing to the circulating light field in the oscillator cavity (10), at least one gain-medium (31) for amplifying the circulating light field in the oscillator cavity (10), and a tuning device (40) for setting a first mode-locking condition and a second mode-locking condition of the oscillator cavity (10) such that an intra-cavity threshold-power for mode-locking at the first mode-locking condition is lower than that at the second mode-locking condition, wherein the first mode-locking condition is adapted for starting or shutting-down of the Kerr lens mode locking and the second mode-locking condition is adapted for continuous Kerr lens mode locking and a resonator-internal peak-power of the circulating light field is higher at the second mode-locking condition than at the first mode-locking condition. Furthermore, a method of operating a pulse laser apparatus is described.

An integrated Fourier domain mode-locked optoelectronic oscillator and its application and a communication system are provided, which relates to the technical field of microwave photonics. The integrated Fourier domain mode-locked optoelectronic oscillator includes an optoelectronic chip and an electronic chip. The optoelectronic chip includes a laser, a modulator, an optical notch filter, and a photodetector coupled via an optical waveguide. The electronic chip includes an electrical amplifier and a power splitter coupled via a coplanar microwave waveguide. The volume, weight and power consumption of the Fourier domain mode-locked optoelectronic oscillator is greatly reduced by integrating all the devices on the chip. A tunable sweeping microwave signal output is realized, and the sweeping speed of the output signal is increased. The integrated Fourier domain mode-locked optoelectronic oscillator can be used in radars and communication systems.

A system for optical comb carrier envelope offset frequency control includes a mode-locked oscillator. The mode-locked oscillator produces an output beam using an input beam and one or more control signals. The output beam includes a controlled carrier envelope offset frequency. A beat note generator produces a beat note signal using a portion of the output beam. A control signal generator produces the one or more control signals to set the beat note signal by modulating the intensity of the input beam within the mode locked oscillator. Modulating the intensity comprises using a Mach-Zehnder intensity modulator or using an intensity modulated external laser to affect a gain medium within the mode-locked laser.

Operating an optical frequency comb assembly includes operating an optical frequency comb source to generate laser light constituting an optical frequency comb and introducing the laser light into a common light path and seeding at least one branch light path by the laser light from the common light path, the branch light path comprising at least one optical element. For the branch light path, a phase difference of a first frequency mode .sub.1 of the optical frequency comb is determined between laser light coupled out at a reference point within the frequency comb assembly upstream of the at least one optical element and laser light coupled out at a measurement point provided in the branch light path downstream of the at least one optical element. Phase correction for the laser light from the branch light path is based on a deviation of the determined phase difference from a target value.

Methods, systems and apparatus are disclosed for delivery of pulsed treatment radiation by employing a pump radiation source generating picosecond pulses at a first wavelength, and a frequency-shifting resonator having a lasing medium and resonant cavity configured to receive the picosecond pulses from the pump source at the first wavelength and to emit radiation at a second wavelength in response thereto, wherein the resonant cavity of the frequency-shifting resonator has a round trip time shorter than the duration of the picosecond pulses generated by the pump radiation source. Methods, systems and apparatus are also disclosed for providing beam uniformity and a sub-harmonic resonator.

When a soliton and a dispersive pulse propagate in an optical fiber, they can interact via cross-phase modulation, which occurs when one pulse modulates the refractive index experienced by the other pulse. Cross-phase modulation causes each pulse to shift in wavelength by an amount proportional to the time delay between the pulses. Changing the time delay between the pulses changes the wavelength shift of each pulse. This make it possible to produce pulses whose output wavelengths can be tuned over large ranges, e.g. hundreds of nm, in a time as short as the pulse repetition period of the laser (e.g., at rates of megahertz or gigahertz). Such a laser requires no moving parts, providing high reliability. The laser's optical path can be made entirely of optical fiber, providing high efficiency with low size, weight, and power consumption.

A class of erbium-doped silicate crystals have a general chemical formula of (Er.sub.xYb.sub.yCe.sub.zA.sub.(1-x-y-z)).sub.3RM.sub.3Si.sub.2O.sub.14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 m continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.

The present invention extends the resolution capability for shaping optical pulses on laser systems from the current state of the art resolution of 250 ps to 1 ps by utilizing a hybrid of EOM and spectral shaping technologies. In one embodiment, a short pulse derived from a mode-locked laser oscillator is dispersed using a dispersive stretcher to about 250 ps, providing a linear mapping of spectrum to time. A typical spectral shaper is used to directly write the desired temporal pattern in the spectral domain to produce a crudely patterned waveform that may also suffer from chirp. The chirp is removed by a process known as difference frequency generation by mixing it with a pulse derived from an equally chirped frequency-doubled pump in an optical parametric amplifier. The pattern is then focused in time, which is accomplished in one embodiment by propagating the pattern through a dispersive element.

The present application discloses a cavity dumped low repetition rate infrared tunable femtosecond laser source configured to produce pulses of 200 femtoseconds or less with a peak power of four megawatts or more for use in a variety of applications including multi-photon microscopy.