H01S3/1628

SINGLE PASS LASER AMPLIFIER WITH PULSED PUMPING

Systems and methods for spectrally broadening seed pulses with a single pass laser amplifier are disclosed. A bulk TM:II-VI polycrystalline material with combined gain and nonlinear characteristic provides passive (cold) spectral broadening of high power seed pulses. Continuous pumping provides more significant spectral broadening. In particular, pulsed pumping of TM:II-VI polycrystalline material (e.g. Cr2+:ZnS, Cr2+:ZnSe, and Cr2+:CdSe) is shown to provide significant spectral broadening to the super continuum generation SCG level. Pulse picking, pump sources, master oscillators and various optical components are described.

Optically pumped semiconductor laser with mode tracking

An intra-cavity doubled OPS-laser has a laser-resonator including a birefringent filter (BRF) for coarse wavelength-selection, and an optically nonlinear (ONL) crystal arranged for type-II frequency-doubling and fine wavelength-selection. Laser-radiation circulates in the laser-resonator at one of a range of fundamental wavelengths dependent on the resonator length. The ONL crystal has a transmission peak-wavelength dependent on the crystal temperature. Reflection of circulating radiation from the BRF is monitored. The reflection is at a minimum when the ONL crystal transmission-peak wavelength is at the circulating radiation wavelength. The temperature of the ONL crystal is selectively varied to maintain the monitored reflection at about a minimum.

HIGH POWER CW MID-IR LASER
20180054042 · 2018-02-22 ·

The present invention provides a rotating chalcogenide gain media ring to provide un-precedented power generation with minimal thermal lensing for CW lasing in the mid-IR spectrum.

Emission source and method of forming the same

In various embodiments, an emission source may be provided. The emission source may also include a gain medium including a halide semiconductor material. The emission source may further include a pump source configured to provide energy to the gain medium. The halide semiconductor material may include a lead-free perovskite material.

Optically-pumped semiconductor waveguide amplifier

A power semiconductor waveguide optical amplifier (P-SWA) may include an amplifier waveguide with an invertible core formed from one or more undoped heterogeneous semiconductor layers and one or more cladding layers surrounding one or more sides of the invertible core formed as one or more undoped semiconductor layers. Pump light may be coupled into the amplifier waveguide to induce the population inversion in the invertible core. Signal light may further be coupled into the amplifier waveguide and may be amplified as it propagates through the amplifier waveguide. The signal light may then exit the amplifier waveguide as amplified signal light.

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material

A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr.sup.2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.

Optical parametric device based on random phase matching in polycrystalline medium

An optical parametric device (OPD), which is selected from an optical parametric oscillator (OPO) or optical parametric generator (OPG), is configured with a nonlinear optical element (NOE) which converts an incoupled pump radiation at first frequency into output signal and idler radiations at one second frequency or different second frequencies, which is/are lower than the first frequency, by utilizing nonlinear interaction via a random quasi-phase matching process (RQPM-NOE). The NOE is made from a nonlinear optical material selected from optical ceramics, polycrystals, micro and nanocrystals, colloids of micro and nanocrystals, and composites of micro and nanocrystals in polymer or glassy matrices. The nonlinear optical material is prepared by modifying a microstructure of the initial sample of the NOE such that an average grain size is of the order of a coherence length of the three-wave interaction which enables the highest parametric gain achievable via the RQPM process.

OPTICALLY-PUMPED SEMICONDUCTOR WAVEGUIDE AMPLIFIER
20250047054 · 2025-02-06 ·

A power semiconductor waveguide optical amplifier (P-SWA) may include an amplifier waveguide with an invertible core formed from one or more undoped heterogeneous semiconductor layers and one or more cladding layers surrounding one or more sides of the invertible core formed as one or more undoped semiconductor layers. Pump light may be coupled into the amplifier waveguide to induce the population inversion in the invertible core. Signal light may further be coupled into the amplifier waveguide and may be amplified as it propagates through the amplifier waveguide. The signal light may then exit the amplifier waveguide as amplified signal light.

MEDICAL LASER LIGHT SOURCE SYSTEM

A medical laser light source system including an excitation laser light source apparatus that generates first excitation light having a wavelength greater than or equal to 1.5 m and less than or equal to 2.2 m and second excitation light having a wavelength greater than or equal to 1.5 m and less than or equal to 2.2 m and differing from the first excitation light with respect to at least one of oscillation energy intensity, oscillation pulse width, repeating frequency, and peak power; an optical fiber that is long-distance and propagates the first excitation light and the second excitation light generated by the excitation laser light source apparatus; and a laser device that generates laser light having a wavelength of at least 2.7 m and no greater than 3.2 m, using at least one of the first excitation light and the second excitation light emitted from the optical fiber.

MID-IR KERR LENS MODE LOCKED LASER WITH NORMAL INCIDENCE MOUNTING OF POLYCRYSTALLINE TM:II-VI MATERIALS AND METHOD FOR CONTROLLING PARAMETERS OF POLYCRYSTALLINE TM:II-VI KERR LENS MODE LOCKED LASER
20170018903 · 2017-01-19 ·

A Kerr Mode Locked (KLM) laser is configured with a resonant cavity. The gain medium, selected from polycrystalline transition metal doped II-VI materials (TM:II-VI), is cut at a normal angle of incidence and mounted in the resonant cavity so as to induce the KLM laser to emit a pulsed laser beam at a fundamental wavelength. The pulses of the emitted laser beam at the fundamental wavelength each vary within a 1.8-8 micron (m) wavelength range, have a pulse duration equal to or longer than 30-35 femtosecond (fs) time range and an average output power within a mW to about 20 watts (W) power range.

The disclosed resonant cavity is configured with a plurality of spaced apart reflectors, two of which flank and are spaced from the gain medium which is pumped to output a laser beam at a fundamental wavelength and its higher harmonic wavelengths. The gain medium is mounted on a translation mechanism operative to controllably displace the gain medium along a waist of the laser beam. The displacement of the gain medium causes redistribution of a laser power between a primary output at the fundamental wavelength and at least one secondary output at the higher harmonic wavelength.