A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m.Math.K or more; a light-emitting element that has a cathode electrode and an anode electrode and is provided on a front surface side of the base member; a capacitive element that is provided on the base member and supplies an electric current to the light-emitting element; and a reference potential wire that is provided on a rear surface side of the base member and is connected to an external reference potential. The reference potential wire is connected to the capacitive element and is insulated from the cathode electrode and the anode electrode.

The invention relates to a method for producing a semiconductor assembly, in particular connecting a semiconductor chip to a heat sink. A first metal layer consisting of Pb, Cd, In or Sn is made so thin that it is bonded by means of an opposing second metal layer consisting of another metal, for example gold, in a layer consisting of intermetallic phases. This can prevent migration of the soft metals. The brittle intermetallic layer is prevented from fracturing by a continuous pressing force.

An optical sub-assembly includes a diode submount structure, a diode mounted to the diode submount, and a thermoelectric cooler (TEC). The TEC is in thermal contact with the diode, and the diode is positioned between the diode submount structure and the TEC.

In various embodiments, laser devices include a thermal bonding layer featuring an array of carbon nanotubes and at least one metallic thermal bonding material.

A light emitting device includes: a plurality of laser elements including a first laser element and a second laser element; a case enclosing the laser elements and including a light-transmissive region; and a plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first laser element and a second main lens configured to collimate or converge light emitted from the second laser element. At least a first portion of the light-transmissive region is disposed on a first imaginary line passing through a light emitting end surface of the first laser element and the first main lens, and at least a second portion of the light-transmissive region is disposed on a second imaginary line passing through a light emitting end surface of the second laser element and the second main lens.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

A laser assembly (1710) for generating an assembly output beam (1712) includes a laser subassembly (1716) including a first laser module (1716A) and a second laser module (1716B), a transform assembly (1744), and a beam combiner (1746). The first laser module (1716A) emits a plurality of spaced apart first laser beams (1720A). The second laser module (1716B) emits a plurality of spaced apart second laser beams (1720B). The transform assembly (1744) is positioned in a path of the laser beams (1720A) (1720B). The transform assembly (1744) directs the laser beams (1720A) (1720B) to spatially overlap at a focal plane of the transform assembly (1744). The beam combiner (1746) is positioned at the focal plane that combines the lasers beams (1720A) (1720B) to provide a combination beam. The laser beams (1720A) (1720B) directed by the transform assembly (1744) impinge on the beam combiner (1746) at different angles.

In various embodiments, laser devices feature means, such as fasteners, for attaching a laser package to a cooling plate, which allow motion of the laser package in response to thermal cycles resulting from operation of a beam emitter therewithin. Embodiments of the invention additionally or instead include laser devices featuring segmented barrier layers for electrically isolating the laser package from the cooling plate.

The object is to provide a technique that allows a semiconductor laser to be efficiently cooled. A semiconductor laser light source device includes: a semiconductor laser; a cooler that cools the semiconductor laser; and a driving substrate that drives the semiconductor laser. The cooler is placed in contact with a surface of the semiconductor laser that is opposite to a light emitting surface of the semiconductor laser. Furthermore, the driving substrate is placed in contact with a surface of the cooler that is opposite to a surface of the cooler on which the semiconductor laser is placed.

An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.