H01S5/0267

LIGHT EMISSION DEVICE
20210091531 · 2021-03-25 · ·

A light emission device includes: a plurality of semiconductor light-emitting elements; an optical element configured to collimate light emitted from each of the plurality of semiconductor light-emitting elements and output a plurality of collimated beams; a converging portion having an aspheric surface configured to converge the plurality of collimated beams; and a wavelength-converting portion including a transmissive region and a reflective region that surrounds the transmissive region, the transmissive region including a light-incident surface at which the plurality of collimated beams enter, wherein the transmissive region includes a phosphor adapted to be excited by the plurality of collimated beams that have been converged by the converging portion.

SEMICONDUCTOR LASER

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45 to a resonator axis with a tolerance of at most 10. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Photonic crystal laser

A photonic crystal laser 10 is a laser that has a configuration, in which a light emitting layer (an active layer 12) that generates light including light of wavelength .sub.L, and a two-dimensional photonic crystal layer 11 including different refractive index regions (holes 111) disposed two-dimensionally on a plate-like base material 112, the different refractive index regions having a refractive index different from a refractive index of the base material, so that a refractive index distribution is formed, are stacked. Each different refractive index region in the two-dimensional photonic crystal layer 11 is disposed at a position shifted from each lattice point of a basic two-dimensional lattice that has periodicity defined to generate a resonant state of light of the wavelength .sub.L by forming a two-dimensional standing wave and not to emit light of the wavelength .sub.L to outside. A positional shift vector r representing the shift of the position of the different refractive index region at the each lattice point from the lattice point is expressed by
r=d.Math.sin(G.Math.r+.sub.0).Math.(cos(L(+.sub.0)), sin(L(+.sub.0))) by using a wave number vector k=(k.sub.x, k.sub.y) of light of the wavelength .sub.L in the two-dimensional photonic crystal layer 11, an effective refractive index n.sub.eff of the two-dimensional photonic crystal layer, an azimuth angle from a predetermined reference line extending in a predetermined direction from a predetermined origin of the basic two-dimensional lattice, an arbitrary constant .sub.0, and a reciprocal lattice vector G=(k.sub.x|k|(sin cos )/n.sub.eff, k.sub.y|k|(sin sin )/n.sub.eff) expressed by using a spread angle of a laser beam, the position vector r of the each lattice point, arbitrary constants d and .sub.0, and an integer L excluding 0.

Light-emitting element and method of manufacturing the same

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

VCSEL array with common wafer level integrated optical device

A VCSEL array has VCSELs on a semiconductor substrate and has a prismatic or Fresnel optical structure, which is arranged to transform laser light to provide a continuous illumination pattern in a reference plane. The optical structure increases a size of the illumination pattern in comparison to an untransformed illumination pattern. The optical structure is arranged such that each VCSEL illuminates a sector of the pattern. Sub-surfaces of the optical structure with different height above the semiconductor substrate are arranged next to each other. Each VCSEL is associated with a sub-surface. A distance between each VCSEL and a size of its sub-surface is arranged such that the VCSEL illuminates only a part of the sub-surface without illuminating one of the steps. The VCSEL array has an array of microlenses, each VCSEL being associated with a microlens arranged to collimate the laser light after traversing the optical structure.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT, AND RADIATION-EMITTING COMPONENT
20200371434 · 2020-11-26 ·

The invention relates a method for producing a radiation-emitting component including a step A, in which a laser having an optical resonator and an output mirror is provided, wherein during the intended operation, laser radiation exits the optical resonator via the output mirror. In a step B), a photoresist layer is applied to the output mirror. In a step C), an optical structure is generated from the photoresist layer by means of a 3D lithography method, wherein the optical structure is designed to influence the beam path of the laser radiation by refraction and/or reflection.

Light source package

A light source package includes a substrate, a light emitting device disposed on the substrate, a lens disposed on the light emitting device, a housing disposed on the substrate, and a conductive member disposed in the housing. The lens is spaced apart from the light emitting device, the housing is disposed on a side surface and a portion of a top surface of the lens, and the conductive member is electrically connected to the light emitting device.

TO CAN LASER ASSEMBLY WITH OFF-CENTER LENS CAP AND AN OPTICAL TRANSCEIVER OR TRANSMITTER IMPLEMENTING SAME
20200335934 · 2020-10-22 ·

The present disclosure is generally directed to a TO can laser package that includes an off-center focus lens integrated into a lens cap to compensate displacement of an associated laser diode. The TO can laser package includes a TO header with a mounting structure for directly electrically coupling an associated laser diode to electrical leads/pins without the use of an intermediate interconnect. The mounting structure displaces the laser diode such that an emission surface, and more particularly, an origin thereof, is displaced/offset relative to a center of the TO header. The integrated lens cap includes a focus lens with an optical center that is offset from a center of the TO header at a distance that is substantially equal to the displacement of the laser diode. Thus, the displacement of the laser diode is compensated for by the off-center focus lens to minimize or otherwise reduce optical misalignment.

TO can laser assembly with off-center lens cap and an optical transceiver or transmitter implementing same

The present disclosure is generally directed to a TO can laser package that includes an off-center focus lens integrated into a lens cap to compensate displacement of an associated laser diode. The TO can laser package includes a TO header with a mounting structure for directly electrically coupling an associated laser diode to electrical leads/pins without the use of an intermediate interconnect. The mounting structure displaces the laser diode such that an emission surface, and more particularly, an origin thereof, is displaced/offset relative to a center of the TO header. The integrated lens cap includes a focus lens with an optical center that is offset from a center of the TO header at a distance that is substantially equal to the displacement of the laser diode. Thus, the displacement of the laser diode is compensated for by the off-center focus lens to minimize or otherwise reduce optical misalignment.

PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL SUBASSEMBLY, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
20200278507 · 2020-09-03 ·

A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.