A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.

A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

A monolithic integrated semiconductor random laser composed of a gain region and random feedback region, comprising: a substrate, a lower confinement layer on the substrate, an active layer on the lower confinement layer, an upper confinement layer on the active layer, a strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, a P.sup.+ electrode layer divided into two segments by an isolation groove and made on the waveguide layer, and an N.sup.+ electrode layer on a back face of the lower confinement layer. The two segments of the P.sup.+ electrode layer correspond respectively to the gain region and the random feedback region. The random feedback region uses a doped waveguide to randomly feed back light emitted and amplified by the gain region. As a result, random laser is emitted. Frequency and intensity of laser emitted by semiconductor laser are random, and a monolithic integration structure is used, making semiconductor laser be light, small, stable in performance, and strong in integration.

The disclosed technology relates to the development of a monolithic active electro-optical device. The electro-optical device may be fabricated using the so-called nanoridge aspect ratio trapping (ART) approach. In one aspect, the disclosed technology is directed to a monolithic integrated electro-optical device, which comprises a III-V-semiconductor-material ridge structure arranged on a Si-based support region. The ridge structure includes a first-conductivity-type bottom region arranged on the support region, a first-conductivity-type lower blocking layer arranged on the top surface and parts of the side surfaces of the bottom region and configured to block second-conductivity-type charge carriers, a not-intentionally-doped (NID) intermediate region arranged on the top and side surfaces of the lower blocking layer and containing a recombination region, a second-conductivity-type upper blocking layer arranged on the top and side surfaces of the intermediate region and configured to block first-conductivity-type charge carriers, and a second-conductivity-type top region arranged on the top and side surfaces of the upper blocking layer.

A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

The disclosed technology relates to the development of a monolithic active electro-optical device. In some embodiments, the electro-optical device may be fabricated using the so-called nanoridge aspect ratio trapping (ART) approach. In one aspect, the electro-optical device is a monolithic integrated electro-optical device comprising a first-conductivity-type Si-based support region and a III-V-semiconductor-material ridge structure extending from the Si-based support region, wherein the ridge structure contains a recombination region. Furthermore, the device comprises a III-V-semiconductor capping layer having a higher band-gap than that of the III-V semiconductor material of the ridge structure and being formed on an outer surface of the ridge structure. The device further comprises at least one second-conductivity-type III-V-semiconductor fin structure narrower than and extending upwards from a top surface of the ridge structure through an opening in the capping layer on the top surface of the ridge structure.

A distributed feedback (DFB) semiconductor laser device includes an active layer, a first grating layer and a second grating. The first grating layer has a first grating structure with a first grating period. The second grating layer has a second grating structure with a second grating period substantially different from the first grating period. The active layer, the first grating layer and the second grating layer are vertically stacked, and the equivalent grating period of the DFB semiconductor laser device is (2P1P2)/(P1+P2), where P1 and P2 respectively represent the first grating period and the second grating period.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.