A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.

A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

A light emitting device includes a substrate, a transistor, a light emitting element, and an interconnection configured to electrically couple the transistor and the light emitting element to each other, wherein the transistor includes a first impurity region provided to the substrate, a second impurity region which is provided to the substrate, and is same in conductivity type as the first impurity region, and a gate, the light emitting element has a stacked body having a plurality of columnar parts, each of the columnar parts includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the interconnection is a third impurity region provided to the substrate, the stacked body is provided to the third impurity region, the third impurity region is same in conductivity type as the first semiconductor layer, the third impurity region is electrically coupled to the first semiconductor layer, and the third impurity region is continuous with the first impurity region.

A light emitting device includes n columnar parts, and an electrode configured to inject an electrical current into the n columnar parts, wherein each of the n columnar parts includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, when viewed from a stacking direction of the first semiconductor layer and the light emitting layer, p first columnar parts out of the n columnar parts fail to overlap an outer edge of the electrode, q second columnar parts out of the n columnar parts overlap the outer edge of the electrode, a number of the second columnar parts centers of which overlap the electrode out of the q second columnar parts is larger than a number of the second columnar parts centers of which fail to overlap the electrode, and n=p+q is fulfilled.

A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

Systems and methods presented herein include efficient and effective Light Emitting Devices (LED) devices. In one embodiment, a light emitting device comprises: a substrate comprising silicon; a first portion comprising a group III-V compound component with a first type of doping; a second portion comprising an active region, a shell comprising a gradient configuration with piezoelectric field compensation characteristics; and a third portion comprising a group III-V compound component with a second type of doping, The silicon substrate is coupled to the first portion. The first portion and shell are coupled to the second portion with is in turn coupled to the third portion. The active region comprises a quantum core structure with strain compensation barriers and polarization doping. The strain compensated barriers form multiple quantum wells. In one embodiment, the strain compensation barriers include AlGaN in a configuration that compensates tensile strain within the active region. The AlGaN can also be configured to induce polarization charges and enhance indium incorporation. In one embodiment, the shell comprises AlGaN with a negative Al composition gradient.