A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

A nitride semiconductor laser device of one embodiment of the present disclosure includes a single-crystal substrate, a base layer, a sheet-shaped structure, a light emitting layer, and a resonator mirror. The single-crystal substrate extends in one direction. The base layer is provided on the single-crystal substrate and includes a nitride semiconductor. The sheet-shaped structure is provided on the base layer to stand in a direction perpendicular to the base layer. The sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface. The side surface extends in a longitudinal direction of the single-crystal substrate. The sheet-shaped structure includes a nitride semiconductor. The light emitting layer is provided at least on the side surface of the sheet-shaped structure. The light emitting layer includes a nitride semiconductor. The resonator mirror is provided by a pair of end surfaces of the sheet-shaped structure that oppose each other in the longitudinal direction.

A nanocrystal array, a laser device, and a display device are provided. The nanocrystal array includes a plurality of nanorods arranged in an array. Each nanorod includes a nanorod buffer layer, a first type semiconductor layer, a tunnel junction layer, a second type semiconductor layer, a multi-quantum well, and another first type semiconductor layer successively stacked on each other. The laser device and the display device include the nanocrystal array. The present disclosure may reduce the laser threshold and increase output power, and further improve the resolution and image quality of the display device.

A laser device includes a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, a first insulating layer, a plurality of hole fillings, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer are stacked in sequence to form an epitaxy structure. The epitaxy structure has a first platform, the first platform has multiple holes to form a photonic crystal structure. The first insulating layer is over an upper surface and a sidewall surface of the first platform, wherein the first insulating layer has a first aperture corresponding to the photonic crystal structure. The hole fillings are respectively filled in the holes. The first electrode is over the photonic crystal structure. The second electrode is electrically connected to the first waveguiding layer.

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.

There is a method for forming a semiconductor nanostructure on a substrate. The method includes placing a substrate and a semiconductor material in a pulsed laser deposition chamber; selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a temperature T of the substrate, a distance d between the semiconductor material and the substrate, and a gas molecule diameter a.sub.0 of a gas to be placed inside the chamber so that conditions for a Stranski-Krastanov nucleation are created; and applying the laser beam with the selected fluence to the semiconductor material to form a plume of the semiconductor material. The selected parameters determine the formation, from the plume, of (1) a nanolayer that covers the substrate, (2) a polycrystalline wetting layer over the nanolayer, and (3) a single-crystal nanofeature over the polycrystalline wetting layer, and the single-crystal nanofeature is grown free of any catalyst or seeding layer.

A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p−q.

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

A buried typed semiconductor optical device includes a semiconductor substrate having a pair of grooves extending in a first direction. An upper surface of a buried layer has a first region that is adjacent to a mesa stripe structure, overlaps with a corresponding one of the pair of grooves, is inclined so as to be higher in a second direction from the mesa stripe structure, and on which a passivation film is not formed. The upper surface of the buried layer has a second region that does not overlap with any of the pair of grooves, is flat, and is higher than a lower end of the first region, and on which the passivation film is formed. The upper surface of the buried layer has a connection region between the first region and the second region at a same height as the second region.