In one embodiment, an apparatus includes: a low noise amplifier (LNA) to receive and amplify a radio frequency (RF) signal, the LNA having a first controllable gain; a mixer to downconvert the RF signal to a second frequency signal; a programmable gain amplifier (PGA) coupled to the mixer to amplify the second frequency signal, the PGA having a second controllable gain; a digitizer to digitize the second frequency signal to a digitized signal; a demodulator coupled to the digitizer to demodulate the digitized signal; an automatic gain control (AGC) circuit to control one or more of the first controllable gain and the second controllable gain; and an AGC settling circuit to cause the demodulator to begin operation in response to determining that the AGC circuit has settled.

Circuits and methods for improving the noise figure (NF) of an amplifier, particularly an LNA, in high-gain modes while improving the IIP3 of the amplifier in low-gain modes. The source of an amplifier common-source FET is coupled to circuit ground thorough a degeneration circuit comprising a two-port inductor and a bypass switch coupled in parallel with the inductor. A switched feedback circuit is coupled between the gate of the common-source FET and a feedback node in the amplifier output signal path. During a low gain mode, the inductor is entirely bypassed and the enabled feedback circuit lowers the input impedance of the common-source FET and reduces the gain of the amplifier circuit, essentially eliminating the need for a degeneration inductor. During a high gain mode, the source of the common-source FET is coupled to circuit ground through the inductor and the feedback circuit is disabled. Other gain modes are supported.

A bias circuit according to an example embodiment includes a first power source configured to generate a first gate voltage that puts an amplifying transistor in an on state; a voltage generating circuit configured to generate a second gate voltage by use of the first gate voltage input from the first power source, the second gate voltage putting the amplifying transistor in an off state; a first switching circuit configured to switch between the first gate voltage input to a first input terminal and the second gate voltage input to a second input terminal and to output the first gate voltage or the second gate voltage, based on a changeover signal related to on/off control of the amplifying transistor; and a voltage output terminal configured to output the gate voltage output from the first switching circuit to the amplifying transistor.

A receiving apparatus includes a terminating network for a three-wire serial bus and a feedback circuit. Each wire of the three-wire serial bus may be coupled through a resistance to a common node of the terminating network. The feedback circuit has a first amplifier circuit having an input coupled to the common node, a comparator that receives an output of the first amplifier circuit as a first input and a reference voltage as a second input, and a second amplifier circuit responsive to an output of the comparator and configured to inject a current through the common node.

A circuit for downlink/uplink operational mode switching in a TDD wireless communication system comprises a field-effect transistor operatively connected to a power amplifier on the downlink path of a RF front-end apparatus in a TDD wireless communication system, a first voltage generator connected to a large-value first resistor, a second voltage generator connected to a second resistor, a large-value hold capacitor, and a sample-and-hold circuit configured to be switched between a reception configuration, wherein the first voltage generator is connected to the gate of the field-effect transistor and the large-value capacitor is connected to the first voltage generator through the first resistor, and a transmission configuration, wherein the gate of the field-effect transistor is connected to the hold capacitor and the hold capacitor is connected to the second voltage generator through the second resistor.

A circuit for downlink/uplink operational mode switching in a TDD wireless communication system comprises a field-effect transistor operatively connected to a power amplifier on the downlink path of a RF front-end apparatus in a TDD wireless communication system, a first voltage generator connected to a large-value first resistor, a second voltage generator connected to a second resistor, a large-value hold capacitor, and a sample-and-hold circuit configured to be switched between a reception configuration, wherein the first voltage generator is connected to the gate of the field-effect transistor and the large-value capacitor is connected to the first voltage generator through the first resistor, and a transmission configuration, wherein the gate of the field-effect transistor is connected to the hold capacitor and the hold capacitor is connected to the second voltage generator through the second resistor.

Methods and devices to support multiple gain states in amplifiers are described. The methods and devices are based on implementing a feedback element in the amplifier and adjusting the impedance of the feedback element to provide a desired gain while maintaining the overall performance of the amplifier and reducing degradation of the S12 parameter. The feedback element includes an adjustable attenuator and a tunable resistive element. The adjustable attenuator is provided in a path that is common to the feedback path and the bypass path of the amplifier. Exemplary implementations of adjustable attenuators are also presented.

Methods and devices to support multiple gain states in amplifiers are described. The methods and devices are based on implementing a feedback element in the amplifier and adjusting the impedance of the feedback element to provide a desired gain while maintaining the overall performance of the amplifier and reducing degradation of the S12 parameter. The feedback element includes an adjustable attenuator and a tunable resistive element. The adjustable attenuator is provided in a path that is common to the feedback path and the bypass path of the amplifier. Exemplary implementations of adjustable attenuators are also presented.

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.