Apparatus, systems and methods for load-adaptive 3D wireless charging are disclosed. In a 3D charging system of an example embodiment, features comprise a 3D coil design that provides magnetic field distribution coverage for a 3D charging space, e.g.

hemi-spherical space/volume; a push-pull class EF2 PA with EMI filter and transmitter circuitry that provides constant current to the 3D coil, with current direction, phase and timing control capability to adapt to load conditions; reactance shift detection circuitry comprising a voltage sensor, current sensor and phase detector and hardware for fast, real-time, computation of reactance and comparison to upper and lower limits for load-adaptive reactance tuning and for auto-protection; and a switchable tuning capacitor network arrangement of shunt and series capacitors configured for auto-tuning of input impedance, e.g. in response to a X detection trigger signal, which enables both coarse-tuning and uniform fine-tuning steps over an extended reactance range.

An amplifier circuit includes an amplifier and a bias circuit. The bias circuit includes a bias transistor having a base terminal and a collector terminal, a transistor having a gate terminal, a source terminal, and a drain terminal, a transistor having a gate terminal, a source terminal, and a drain terminal, resistors, and a current source. The source terminals are connected to a power source. One end portion of the resistor is connected to the base terminal, the other end portion of the resistor is connected to the drain terminal, one end portion of the resistor is connected to the other end portion of the resistor, the other end portion of the resistor is connected to the bias output terminal, and the bias circuit further includes a feedback circuit that controls the electric potential of the base terminal based on the electric potential of the collector terminal.

An amplifier circuit includes an amplifier and a bias circuit. The bias circuit includes a bias transistor having a base terminal and a collector terminal, a transistor having a gate terminal, a source terminal, and a drain terminal, a transistor having a gate terminal, a source terminal, and a drain terminal, resistors, and a current source. The source terminals are connected to a power source. One end portion of the resistor is connected to the base terminal, the other end portion of the resistor is connected to the drain terminal, one end portion of the resistor is connected to the other end portion of the resistor, the other end portion of the resistor is connected to the bias output terminal, and the bias circuit further includes a feedback circuit that controls the electric potential of the base terminal based on the electric potential of the collector terminal.

A split-steer amplifier with an invertible phase output, includes a first transistor having its base coupled to a positive node of an input port, its emitter coupled to ground, and collector connected to a positive intermediate node; a second transistor having its base coupled to a negative node of the input port, its emitter coupled to ground, and collector connected to a negative intermediate node; and multiple output ports each having a transistor arrangement operable to couple a positive node of that output port to the positive intermediate node and a negative node of that output port to the negative intermediate node, operable to couple the positive node of that output port to the negative intermediate node and the negative node of that output port to the positive intermediate node, and operable to decouple the positive node and the negative node of that output port from the intermediate nodes.

A split-steer amplifier with an invertible phase output, includes a first transistor having its base coupled to a positive node of an input port, its emitter coupled to ground, and collector connected to a positive intermediate node; a second transistor having its base coupled to a negative node of the input port, its emitter coupled to ground, and collector connected to a negative intermediate node; and multiple output ports each having a transistor arrangement operable to couple a positive node of that output port to the positive intermediate node and a negative node of that output port to the negative intermediate node, operable to couple the positive node of that output port to the negative intermediate node and the negative node of that output port to the positive intermediate node, and operable to decouple the positive node and the negative node of that output port from the intermediate nodes.

A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.

An apparatus comprises a transistor pair including a first metal oxide semiconductor field effect transistor (MOSFET) coupled to a second MOSFET. The first MOSFET includes a first gate terminal and a first drain terminal. The second MOSFET comprises a second gate terminal and a second drain terminal. The first gate terminal is configured to receive a first signal. The second gate terminal is configured to receive a second signal that is phase shifted with respect to the first signal. An output node is coupled to the first drain terminal and the second drain terminal and configured to output a third signal that is proportional to a power of the first signal and the second signal.

An apparatus comprises a transistor pair including a first metal oxide semiconductor field effect transistor (MOSFET) coupled to a second MOSFET. The first MOSFET includes a first gate terminal and a first drain terminal. The second MOSFET comprises a second gate terminal and a second drain terminal. The first gate terminal is configured to receive a first signal. The second gate terminal is configured to receive a second signal that is phase shifted with respect to the first signal. An output node is coupled to the first drain terminal and the second drain terminal and configured to output a third signal that is proportional to a power of the first signal and the second signal.

An amplifier circuit includes an amplifier core having a cascode transistor and a gain transistor, a bias circuit coupled to the amplifier core, the bias circuit comprising: a first current source, a second current source, an operational transconductance amplifier (OTA), a bias cascode transistor pair having a bias cascode transistor and a bias gain transistor, and a replica circuit coupled to the first current source and to the second current source.

A receiver front end (300) having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch (235) is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch (260) is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.