A receiver front end (300) having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch (235) is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch (260) is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Aspects of the present disclosure provide a circuit configured to adjust an input impedance of an amplifier such as a low-noise amplifier. In certain aspects, the circuit is coupled to a node, wherein the node is between a first transistor and a second transistor of the amplifier. The circuit may include an inductor and a capacitor coupled in series, wherein the inductor is coupled with one or more load inductors of the amplifier through negative magnetic coupling.

Aspects of the present disclosure provide a circuit configured to adjust an input impedance of an amplifier such as a low-noise amplifier. In certain aspects, the circuit is coupled to a node, wherein the node is between a first transistor and a second transistor of the amplifier. The circuit may include an inductor and a capacitor coupled in series, wherein the inductor is coupled with one or more load inductors of the amplifier through negative magnetic coupling.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

An electronic device may include wireless circuitry with a processor, a transceiver, an antenna, and a front-end module coupled between the transceiver and the antenna. The front-end module may include one or more power amplifiers for amplifying a signal for transmission through the antenna. A power amplifier may include a phase distortion compensation circuit. The phase distortion compensation circuit may include one or more n-type metal-oxide-semiconductor capacitors configured to receive a bias voltage. The bias voltage may be set to provide the proper amount of phase distortion compensation.

A power amplifier arrangement (100) for amplifying an input signal (Pin) to produce an output signal (Pout) is disclosed. The amplifier arrangement (100) comprise an input port (IN) for receiving the input signal; an output transmission line (110) having a first terminal (111) and a second terminal (112); an output port (OUT) coupled to the second terminal (112) of the output transmission line (110) for providing the output signal; and a plurality N of amplifying devices (121, 122, . . . 12N) distributed along the output transmission line (110). The power amplifier arrangement (100) is configured such that the plurality N of amplifying devices are active sequentially for amplifying the input signal with increasing amplitude of the input signal.

A LNA (low-noise amplifier) includes a matching network configured to provide a three-way coupling between an input node, a matched node, and a source node; a gate capacitor configured to provide AC (alternate current) coupling between the matched node and a gate node; a cascode amplifier configured to receive a gate voltage at the gate node and output an output voltage at an output node in accordance with a source degeneration at the source node; and a load network connected to the output node, wherein the matching network having a shunt inductor and a series inductor that are overlapped in layout to have a strong mutual coupling and a source degenerating inductor that is laid out in a close proximity to the shunt inductor to have a strong mutual coupling

A LNA (low-noise amplifier) includes a matching network configured to provide a three-way coupling between an input node, a matched node, and a source node; a gate capacitor configured to provide AC (alternate current) coupling between the matched node and a gate node; a cascode amplifier configured to receive a gate voltage at the gate node and output an output voltage at an output node in accordance with a source degeneration at the source node; and a load network connected to the output node, wherein the matching network having a shunt inductor and a series inductor that are overlapped in layout to have a strong mutual coupling and a source degenerating inductor that is laid out in a close proximity to the shunt inductor to have a strong mutual coupling

An amplifying circuit comprises: a plurality of first transistors; a second transistor coupled in series with the first transistor; and a compensation capacitor group comprising a plurality of compensation capacitors and a plurality of switches. When the amplifying circuit operates in a first gain mode, a first number of first transistors are turned on and a second number of compensation capacitors are coupled between the first terminal and the second terminal of the first transistor. When the amplifying circuit operates in a second gain mode, a third number of first transistors are turned on and a fourth number of compensation capacitors are coupled between the first terminal and the second terminal of the first transistor. The first number is larger than the third number, and the second number is larger than the fourth number.