H03F3/193

Gain stabilization for supply modulated RF and microwave integrated circuits

Biasing circuitry for RF and microwave integrated circuits keeps the quiescent current of a power amplifier integrated circuit constant when operated with a time-varying DC supply voltage. A dynamic gate bias circuit includes an on-chip sense transistor and control circuitry to keep current of the sense transistor substantially constant by varying sense transistor bias voltage to compensate for variation in the time-varying supply voltage signal. The varying bias voltage is then applied to the amplifying transistors of the power amplifier, resulting in their quiescent current being substantially independent of the time-varying supply voltage.

Gain stabilization for supply modulated RF and microwave integrated circuits

Biasing circuitry for RF and microwave integrated circuits keeps the quiescent current of a power amplifier integrated circuit constant when operated with a time-varying DC supply voltage. A dynamic gate bias circuit includes an on-chip sense transistor and control circuitry to keep current of the sense transistor substantially constant by varying sense transistor bias voltage to compensate for variation in the time-varying supply voltage signal. The varying bias voltage is then applied to the amplifying transistors of the power amplifier, resulting in their quiescent current being substantially independent of the time-varying supply voltage.

SELF-BIASING AND SELF-SEQUENCING OF DEPLETION-MODE TRANSISTORS

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

SELF-BIASING AND SELF-SEQUENCING OF DEPLETION-MODE TRANSISTORS

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

MULTI-BAND DIGITAL COMPENSATOR FOR A NON-LINEAR SYSTEM

A pre-distorter that both accurately compensates for the non-linearities of a radio frequency transmit chain, and that imposes as few computation requirements in terms of arithmetic operations, uses a diverse set of real-valued signals that are derived from separate band signals that make up the input signal. The derived real signals are passed through configurable non-linear transformations, which may be adapted during operation, and which may be efficiently implemented using lookup tables. The outputs of the non-linear transformations serve as gain terms for a set of complex signals, which are functions of the input, and which are summed to compute the pre-distorted signal. A small set of the complex signals and derived real signals may be selected for a particular system to match the classes of non-linearities exhibited by the system, thereby providing further computational savings, and reducing complexity of adapting the pre-distortion through adapting of the non-linear transformations.

MULTI-BAND DIGITAL COMPENSATOR FOR A NON-LINEAR SYSTEM

A pre-distorter that both accurately compensates for the non-linearities of a radio frequency transmit chain, and that imposes as few computation requirements in terms of arithmetic operations, uses a diverse set of real-valued signals that are derived from separate band signals that make up the input signal. The derived real signals are passed through configurable non-linear transformations, which may be adapted during operation, and which may be efficiently implemented using lookup tables. The outputs of the non-linear transformations serve as gain terms for a set of complex signals, which are functions of the input, and which are summed to compute the pre-distorted signal. A small set of the complex signals and derived real signals may be selected for a particular system to match the classes of non-linearities exhibited by the system, thereby providing further computational savings, and reducing complexity of adapting the pre-distortion through adapting of the non-linear transformations.

Tunable power amplifier with wide frequency range

A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Tunable power amplifier with wide frequency range

A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Attenuation of flicker noise in bias generators

This disclosure provides systems and apparatuses for reducing flicker noise in output signals provided by a radio frequency (RF) amplifier. In some implementations, the RF amplifier may include a bias generator to provide one or more bias signals to control operating points of devices and circuits of the RF amplifier. The bias generator may include a feedback circuit to generate a current to attenuate flicker noise within the bias generator. In some implementations, the feedback circuit may receive a bias voltage and may generate the current based on a frequency of the bias voltage.

Ultrafast and precise gain control step in RF amplifiers

An apparatus includes an amplifier and a gain control circuit. The amplifier may be configured to provide multiple gain steps. The gain control circuit may be configured to provide fast and precise changes between the multiple gain steps of the amplifier. The gain control circuit may be further configured to change an impedance of the amplifier to switch between the gain steps. The gain control circuit may be further configured to compensate for changes in frequency response related to changing the impedance. The gain control circuit may be further configured to inject a complementary charge to an input of the amplifier to correct a bias voltage deviation and a transient caused by the gain control circuit.