Bias arrangements for amplifiers are disclosed. An example bias arrangement for an amplifier includes a bias circuit, configured to produce a bias signal for the amplifier; a linearization circuit, configured to improve linearity of the amplifier by modifying the bias signal produced by the bias circuit to produce a modified bias signal to be provided to the amplifier; and a coupling circuit, configured to couple the bias circuit and the linearization circuit. Providing separate bias and linearization circuits coupled to one another by a coupling circuit allows separating a linearization operation from a biasing loop to overcome some drawbacks of prior art bias arrangements that utilize a single biasing loop.

Bias arrangements for amplifiers are disclosed. An example bias arrangement for an amplifier includes a bias circuit, configured to produce a bias signal for the amplifier; a linearization circuit, configured to improve linearity of the amplifier by modifying the bias signal produced by the bias circuit to produce a modified bias signal to be provided to the amplifier; and a coupling circuit, configured to couple the bias circuit and the linearization circuit. Providing separate bias and linearization circuits coupled to one another by a coupling circuit allows separating a linearization operation from a biasing loop to overcome some drawbacks of prior art bias arrangements that utilize a single biasing loop.

An inductor isolation apparatus and method to reduce interaction between inductors on an integrated circuit.

An inductor isolation apparatus and method to reduce interaction between inductors on an integrated circuit.

A switching system is connected to the power amplifier of an RF system. The switching system can switch the DC supply voltage to the power amplifier while handling the high DC current and the nanosecond switching speed requirements that are mandatory for most RF systems. The embodiments can rapidly control DC voltages but not interfere with the optimized operation of the RF transistor. The embodiments provide a desired sharp turn-on leading edge for an RF pulse while eliminating the extremely long and undesirable ramp down that typically occurs beyond the desired RF pulse period.

A switching system is connected to the power amplifier of an RF system. The switching system can switch the DC supply voltage to the power amplifier while handling the high DC current and the nanosecond switching speed requirements that are mandatory for most RF systems. The embodiments can rapidly control DC voltages but not interfere with the optimized operation of the RF transistor. The embodiments provide a desired sharp turn-on leading edge for an RF pulse while eliminating the extremely long and undesirable ramp down that typically occurs beyond the desired RF pulse period.

Various embodiments of the present invention relate to a power amplification device and method, wherein the power amplification device can comprise: a power amplifier; a switch mode converter for controlling a bias of the power amplifier; a comparator for providing a switching signal to the switch mode converter according to an envelope signal; and a control unit for determining whether a switching frequency of the switch mode converter is within a specific band and applying an offset to the switching frequency so as to deviate from the specific band if the switching frequency of the switch mode converter is within the specific band. Various other embodiments can be carried out.

Various embodiments of the present invention relate to a power amplification device and method, wherein the power amplification device can comprise: a power amplifier; a switch mode converter for controlling a bias of the power amplifier; a comparator for providing a switching signal to the switch mode converter according to an envelope signal; and a control unit for determining whether a switching frequency of the switch mode converter is within a specific band and applying an offset to the switching frequency so as to deviate from the specific band if the switching frequency of the switch mode converter is within the specific band. Various other embodiments can be carried out.

An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S.sub.1(t)). A first reactive element (C.sub.A-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (L.sub.A-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S.sub.2(t)), a third reactive element (C.sub.A-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (L.sub.EEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.

An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S.sub.1(t)). A first reactive element (C.sub.A-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (L.sub.A-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S.sub.2(t)), a third reactive element (C.sub.A-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (L.sub.EEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.