A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.

A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.

An amplification device includes a base substrate, an amplification element, and a matching circuit board. The amplification element is mounted on the base substrate. The matching circuit board is mounted on the base substrate and includes a circuit pattern which is electrically connected to the amplification element. The matching circuit board includes a first side surface and a second side surface each extending in the longitudinal direction of the matching circuit board. A first recess is provided in the first side surface. A second recess facing the first recess is provided in the second side surface.

An amplification device includes a base substrate, an amplification element, and a matching circuit board. The amplification element is mounted on the base substrate. The matching circuit board is mounted on the base substrate and includes a circuit pattern which is electrically connected to the amplification element. The matching circuit board includes a first side surface and a second side surface each extending in the longitudinal direction of the matching circuit board. A first recess is provided in the first side surface. A second recess facing the first recess is provided in the second side surface.

A chip module, including a radio frequency integrated circuit (RFIC) chip and a package, and a method and system for designing the module. Chip and package design are performed so the RF front end (FE) is split between chip and package. The chip includes an amplifier with a first differential port and the package includes a passive device and matching network with a second differential port connected to the first differential port. The second differential port is power matched to the first differential port using complex power matching based on port voltage reflection coefficients in order to achieve improved performance (i.e., a peak power transfer across a bandwidth as opposed to at only one frequency). The power matching process can result in a chip power requirement reduction that allows for device size scaling. Thus, designing the chip and designing the package is iteratively repeated in a chip-package co-optimization process.

A chip module, including a radio frequency integrated circuit (RFIC) chip and a package, and a method and system for designing the module. Chip and package design are performed so the RF front end (FE) is split between chip and package. The chip includes an amplifier with a first differential port and the package includes a passive device and matching network with a second differential port connected to the first differential port. The second differential port is power matched to the first differential port using complex power matching based on port voltage reflection coefficients in order to achieve improved performance (i.e., a peak power transfer across a bandwidth as opposed to at only one frequency). The power matching process can result in a chip power requirement reduction that allows for device size scaling. Thus, designing the chip and designing the package is iteratively repeated in a chip-package co-optimization process.

A combining balun includes: a first input side conductive member wound around a first axis on a first surface, which intersects with the first axis, and has a first portion between a second axis and the first axis and through which a first input current flows; a second input side conductive member wound around the second axis on the first surface and has a second portion between the second axis and the first portion and through which a second input current flows; a first output side conductive member wound around the first axis on a second surface, which faces the first surface, and has a third portion which faces the first portion; and a second output side conductive member wound around the second axis on the second surface and has a fourth portion which faces the second portion.

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.