Compact low noise amplifiers that have wide-band coverage while meeting necessary input matching and output matching characteristics. Embodiments include a wide-band, two-stage LNA with minimum degradation in performance compared to multiple narrow-band, single-stage LNAs. A generalized embodiment includes a first amplifier stage having a terminal coupled to a mutually coupled inductor circuit and to a second amplifier stage. The second amplifier stage includes a terminal coupled to the mutually coupled inductor circuit. The mutually coupled inductor circuit comprises electromagnetically coupled inductors L1, L2. Second terminals of the first and second amplifier stages are coupled to respective degeneration inductors. The electromagnetically coupled inductors L1, L2 of the inductor circuit substantially increase the output bandwidth of the LNA with minimum degradation in performance.

Compact low noise amplifiers that have wide-band coverage while meeting necessary input matching and output matching characteristics. Embodiments include a wide-band, two-stage LNA with minimum degradation in performance compared to multiple narrow-band, single-stage LNAs. A generalized embodiment includes a first amplifier stage having a terminal coupled to a mutually coupled inductor circuit and to a second amplifier stage. The second amplifier stage includes a terminal coupled to the mutually coupled inductor circuit. The mutually coupled inductor circuit comprises electromagnetically coupled inductors L1, L2. Second terminals of the first and second amplifier stages are coupled to respective degeneration inductors. The electromagnetically coupled inductors L1, L2 of the inductor circuit substantially increase the output bandwidth of the LNA with minimum degradation in performance.

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

An amplifier device includes a regulator circuit, a first voltage converting circuit, a first control circuit, and an amplifier circuit. The regulator circuit is configured to output a first driving voltage. The first voltage converting circuit is coupled to the regulator circuit, and is configured to output one of the first driving voltage and at least one first voltages related to the first driving voltage, as a first operating voltage. The first control circuit is coupled to the first voltage converting circuit through a first node, and is configured to receive the first operating voltage and generate a first operating signal according to the first operating voltage and a first control signal. The amplifier circuit is coupled to the first control circuit and the regulator circuit, and is configured to receive the first driving voltage, and is controlled by the first operating signal to generate an output voltage.

An amplifier device includes a regulator circuit, a first voltage converting circuit, a first control circuit, and an amplifier circuit. The regulator circuit is configured to output a first driving voltage. The first voltage converting circuit is coupled to the regulator circuit, and is configured to output one of the first driving voltage and at least one first voltages related to the first driving voltage, as a first operating voltage. The first control circuit is coupled to the first voltage converting circuit through a first node, and is configured to receive the first operating voltage and generate a first operating signal according to the first operating voltage and a first control signal. The amplifier circuit is coupled to the first control circuit and the regulator circuit, and is configured to receive the first driving voltage, and is controlled by the first operating signal to generate an output voltage.

In one example, a circuit includes a first node to receive an analog signal that is an amplitude modulated radio-frequency signal for a digital signal. An output node is configured to provide an output signal indicative of rising and falling edges of an envelope of the analog signal. The rising and falling edges are indicative of rising and falling edges of the digital signal. A first current path is disposed between a power supply node and the first node. The first current path includes a first transistor coupled between the first node and a first bias source. The first bias source is coupled between the first transistor and the power supply node. The output node is coupled to a first intermediate node in the first current path between the transistor and the first bias source. A control terminal of the first transistor is coupled to the output node via a feedback network.

An amplifier circuit (1) includes a FET (10) having a source terminal (S1), a drain terminal (D1), and a gate terminal (G1), a FET (20) having a source terminal (S2), a drain terminal (D2), and a gate terminal (G2) and coupled in parallel with the FET (10), a FET (30) having a source terminal (S3) coupled to the drain terminals (D1 and D2), a drain terminal (D3), and a gate terminal (G3) and cascoded with the FETs (10 and 20), and feedback circuits (21 and 22) configured to feed back to the gate terminal (G2) a high frequency signal outputted from the source terminal (S2) or the drain terminal (D2).

An amplifier circuit (1) includes a FET (10) having a source terminal (S1), a drain terminal (D1), and a gate terminal (G1), a FET (20) having a source terminal (S2), a drain terminal (D2), and a gate terminal (G2) and coupled in parallel with the FET (10), a FET (30) having a source terminal (S3) coupled to the drain terminals (D1 and D2), a drain terminal (D3), and a gate terminal (G3) and cascoded with the FETs (10 and 20), and feedback circuits (21 and 22) configured to feed back to the gate terminal (G2) a high frequency signal outputted from the source terminal (S2) or the drain terminal (D2).

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.