Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

The apparatus relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long-Term Evolution (LTE). The disclosure relates to an apparatus including an electronic circuit for amplifying a signal. The apparatus includes a transceiver including an amplification circuit, and at least one processor coupled to the transceiver. The amplification circuit includes a first path to generate a first current corresponding to a voltage of an input signal, a second path to generate a second current corresponding to a voltage of the input signal, a separation unit to control each of the first current and the second current, a current mirror to generate a third current corresponding to the first current, and a folding unit to generate an output signal on the basis of the second current and the third current.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

The present disclosure provides a multiple output low noise amplifier circuit, chip and electronic device. The multiple output low noise amplifier circuit includes: a first processing module for amplifying an input voltage signal and converting it into at least two first current signals; a second processing module for impedance matching at the input terminal of the low noise amplifier circuit, and for amplifying the input voltage signal and converting it into at least two second current signals; a voltage output module, connected to the first processing module and the second processing module, for combining the first current signals and the second current signals and converting them into output voltage signals. The low noise amplifier circuit can convert a single input voltage signal to at least two output voltage signals, and is applicable in RF front ends with multiple output terminals.

The present disclosure provides a multiple output low noise amplifier circuit, chip and electronic device. The multiple output low noise amplifier circuit includes: a first processing module for amplifying an input voltage signal and converting it into at least two first current signals; a second processing module for impedance matching at the input terminal of the low noise amplifier circuit, and for amplifying the input voltage signal and converting it into at least two second current signals; a voltage output module, connected to the first processing module and the second processing module, for combining the first current signals and the second current signals and converting them into output voltage signals. The low noise amplifier circuit can convert a single input voltage signal to at least two output voltage signals, and is applicable in RF front ends with multiple output terminals.

The present disclosure provides a Multiple Inputs Multiple Outputs RF front-end amplifier circuit, chip, and electronic device and a method for configuring signal path. The RF front-end amplifier circuit includes: at least two low-noise amplifying modules, each of which amplifies one voltage signal and converts into one or more intermediate current signals; a voltage output module, connected to each of the low-noise amplifying modules, for combining the intermediate current signal output by the low-noise amplifying module and converting them into one or more output voltage signals. The RF front-end amplifier circuit can be applied to an RF front-end with a Multiple Inputs Multiple Outputs structure.

The present disclosure provides a Multiple Inputs Multiple Outputs RF front-end amplifier circuit, chip, and electronic device and a method for configuring signal path. The RF front-end amplifier circuit includes: at least two low-noise amplifying modules, each of which amplifies one voltage signal and converts into one or more intermediate current signals; a voltage output module, connected to each of the low-noise amplifying modules, for combining the intermediate current signal output by the low-noise amplifying module and converting them into one or more output voltage signals. The RF front-end amplifier circuit can be applied to an RF front-end with a Multiple Inputs Multiple Outputs structure.

Disclosed is a dual-band coupling low-noise amplifying circuit and an amplifier, which comprises an input frequency dividing circuit, a high-frequency amplifying circuit, a low-frequency amplifying circuit and an output combining circuit. The input frequency dividing circuit includes a first duplexer, a first capacitor and a second capacitor, and the output combining circuit includes a second duplexer, a third capacitor and a fourth capacitor. The input frequency dividing circuit divides the received radio frequency signals into high-frequency signals and low-frequency signals, then inputs the high-frequency signals into the high-frequency amplifying circuit for power amplification, and inputs the low-frequency signals into the low-frequency amplifying circuit for power amplification, and outputs the high-frequency signals and the low-frequency signals after power amplification through the output combining circuit.

The disclosure relates to a radio frequency oscillator. The radio frequency oscillator includes a resonator circuit being resonant at an excitation of the resonator circuit in a differential mode and at an excitation of the resonator circuit in a common mode. The resonator circuit has a differential mode resonance frequency at the excitation in the differential mode, and the resonator circuit has a common mode resonance frequency at the excitation in the common mode. A first excitation circuit is configured to excite the resonator circuit in the differential mode to obtain a differential mode oscillator signal oscillating at the differential mode resonance frequency, and a second excitation circuit is configured to excite the resonator circuit in the common mode to obtain a common mode oscillator signal oscillating at the common mode resonance frequency.