When a signal source sends a radio-frequency signal to an input amplification circuit, a control circuit sends a first control signal to the input amplification circuit according to the frequency of the radio-frequency signal, the input amplification circuit receives the first control signal and forms an input oscillation loop, the radio-frequency signal forms an amplified first signal through the input oscillation loop, and the input amplification circuit sends the first signal to the output amplification circuit. According to the frequency of the radio-frequency signal, the control circuit transmits a second control signal to the output amplification circuit, which forms an output oscillation loop matched with the first signal. The first signal is amplified by the output oscillation loop to form an emitting signal, the output amplification circuit transmits the emitting signal to the emitting antenna for emitting, thereby improving the utilization ratio of a radio-frequency front end chip package.

When a signal source sends a radio-frequency signal to an input amplification circuit, a control circuit sends a first control signal to the input amplification circuit according to the frequency of the radio-frequency signal, the input amplification circuit receives the first control signal and forms an input oscillation loop, the radio-frequency signal forms an amplified first signal through the input oscillation loop, and the input amplification circuit sends the first signal to the output amplification circuit. According to the frequency of the radio-frequency signal, the control circuit transmits a second control signal to the output amplification circuit, which forms an output oscillation loop matched with the first signal. The first signal is amplified by the output oscillation loop to form an emitting signal, the output amplification circuit transmits the emitting signal to the emitting antenna for emitting, thereby improving the utilization ratio of a radio-frequency front end chip package.

Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.

Voltage ripple reduction in a power management circuit is disclosed. The power management circuit includes a power amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage and an envelope tracking integrated circuit (ETIC) configured to provide the modulated voltage to the power amplifier circuit via a conductive path. Notably, an output impedance presenting at an input of the power amplifier circuit can interact with a modulated load current in the power amplifier circuit to create a voltage ripple in the modulated voltage to potentially cause an undesirable error in the RF signal. Herein, the ETIC is configured to modify the modulated voltage based on feedback of the voltage ripple in the modulated voltage. As such, it is possible to reduce the output impedance at the input of the power amplifier circuit to thereby reduce the voltage ripple in the modulated voltage.

Voltage ripple reduction in a power management circuit is disclosed. The power management circuit includes a power amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage and an envelope tracking integrated circuit (ETIC) configured to provide the modulated voltage to the power amplifier circuit via a conductive path. Notably, an output impedance presenting at an input of the power amplifier circuit can interact with a modulated load current in the power amplifier circuit to create a voltage ripple in the modulated voltage to potentially cause an undesirable error in the RF signal. Herein, the ETIC is configured to modify the modulated voltage based on feedback of the voltage ripple in the modulated voltage. As such, it is possible to reduce the output impedance at the input of the power amplifier circuit to thereby reduce the voltage ripple in the modulated voltage.

This application is generally related to methods for improving performance in a system. One of the methods may include a step of determining whether absorbed power in a system meets a predetermined threshold. The absorbed power may be based upon first and second Walsh codes transmitted to each of first and second gain and phase modulators in the system. The first Walsh code may be orthogonal to the second Walsh code. A first set of the first and second Walsh codes may be inverted with respect to a second set of the first and second Walsh codes. The method may also include a step of modulating the absorbed power in view of the determination. The method may further include a step of transmitting feedback based upon the modulated power to the first and second gain and phase modulators.

A negative feedback inductor and a gate inductor are formed in different wiring layers of a substrate so as to be at least partially overlapped with each other in a plan view. When the lower wiring layer is thinner and the upper wiring layer is thicker, the negative feedback inductor Lc is formed in the lower wiring layer that is thinner.

A negative feedback inductor and a gate inductor are formed in different wiring layers of a substrate so as to be at least partially overlapped with each other in a plan view. When the lower wiring layer is thinner and the upper wiring layer is thicker, the negative feedback inductor Lc is formed in the lower wiring layer that is thinner.

An amplifier device includes a substrate, a composite packaged amplifier having a bottom plate and an output plate, a first amplifier and a second amplifier provided on the bottom plate, a combining node that combines an output of the first amplifier with an output of the second amplifier, an output matching circuits provided on the bottom plate, that has a first transmission line provided between the first amplifier and the combining node, and a second transmission line provided between the combining node and the second amplifier, a third transmission line having one transmission line on which the output plate is mounted and other transmission line that connects the one transmission line to the external port, and wirings connecting to one terminal of the output plate and the combining node. A length of the output plate and the other transmission line is equal or less than π/4 radian for a signal.

In some implementations, there is provided an apparatus comprising a resonant amplifier circuit including a first inductor having a first inductive input and a first inductive output; a second inductor having a second inductive input and a second inductive output; a first switch coupled to the first inductive output; and a second switch coupled to the second inductive output, wherein the first switch and the second switched are driven out of phase, wherein the first inductor is configured to be resonant with a first capacitance associated with the first switch, and wherein the second inductor is configured to be resonant with a second capacitance associated with the second switch. Related systems and articles of manufacture are also provided.