A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

Circuit and methods using a single low-noise amplifier (LNA) to provide amplification for a wide band of RF frequencies while maintaining high gain and a low noise factor. Embodiments include an amplifier circuit including an input signal path for receiving a wideband RF signal; a switched inductor tuning block coupled to the input signal path and configured to selectively couple one of a plurality of inductances to the input signal path; and an amplifier coupled to the switched inductor tuning block and configured to receive the RF signal after passage through the selected coupled inductance. The switched inductor tuning block includes a plurality of selectable branches, each including an RF input switch; an RF output switch; an inductor coupled between the RF input switch and the RF output switch; and first and second shunt switches coupled between a respective terminal of the inductor and circuit ground.

Circuit and methods using a single low-noise amplifier (LNA) to provide amplification for a wide band of RF frequencies while maintaining high gain and a low noise factor. Embodiments include an amplifier circuit including an input signal path for receiving a wideband RF signal; a switched inductor tuning block coupled to the input signal path and configured to selectively couple one of a plurality of inductances to the input signal path; and an amplifier coupled to the switched inductor tuning block and configured to receive the RF signal after passage through the selected coupled inductance. The switched inductor tuning block includes a plurality of selectable branches, each including an RF input switch; an RF output switch; an inductor coupled between the RF input switch and the RF output switch; and first and second shunt switches coupled between a respective terminal of the inductor and circuit ground.

A semiconductor device comprises a substrate and a high-electron-mobility transistor (HEMT). The substrate is formed with a recess. At least a portion of the HEMT is disposed in the recess. A method for manufacturing the semiconductor device is also disclosed. A radio frequency (RF) front-end module that employs the semiconductor device is also disclosed

A semiconductor device comprises a substrate and a high-electron-mobility transistor (HEMT). The substrate is formed with a recess. At least a portion of the HEMT is disposed in the recess. A method for manufacturing the semiconductor device is also disclosed. A radio frequency (RF) front-end module that employs the semiconductor device is also disclosed

There is provided a technique for calibrating the envelope tracking circuitry of the wireless interface of an electronic device to compensate for any delay mismatch between the IQ signal path and the envelope path. Thee desired levels of input test signals are determined to assure that they are sensitive to any delay mismatch which may be in the system. The propagation delay from the signal generator to the signal analyzer of the envelope tracking system is estimated and delay compensation is performed. To reduce the noise of the measurement, distortion in the received signal may also be determined and noise compensation may also be performed. Based on these determinations, the envelope tracking circuitry may be calibrated by introducing an appropriate delay in either the envelop path or the IQ signal path.

There is provided a technique for calibrating the envelope tracking circuitry of the wireless interface of an electronic device to compensate for any delay mismatch between the IQ signal path and the envelope path. Thee desired levels of input test signals are determined to assure that they are sensitive to any delay mismatch which may be in the system. The propagation delay from the signal generator to the signal analyzer of the envelope tracking system is estimated and delay compensation is performed. To reduce the noise of the measurement, distortion in the received signal may also be determined and noise compensation may also be performed. Based on these determinations, the envelope tracking circuitry may be calibrated by introducing an appropriate delay in either the envelop path or the IQ signal path.

A power amplifier, a power amplifier system, and an operating method thereof are provided. The power amplifier system may include a power amplifier, a power amplifier controller, and a voltage generator. The power amplifier may include a plurality of power transistor cells each of which receives an RF signal through a control terminal thereof to amplify the RF signal. The power amplifier controller may control turn-on and turn-off operations of at least one power transistor cell among the plurality of power transistor cells based on a power mode. The voltage generator may generate a power supply voltage supplied to first terminals of the power transistor cells and may change the power supply voltage depending on the power mode.

A power amplifier, a power amplifier system, and an operating method thereof are provided. The power amplifier system may include a power amplifier, a power amplifier controller, and a voltage generator. The power amplifier may include a plurality of power transistor cells each of which receives an RF signal through a control terminal thereof to amplify the RF signal. The power amplifier controller may control turn-on and turn-off operations of at least one power transistor cell among the plurality of power transistor cells based on a power mode. The voltage generator may generate a power supply voltage supplied to first terminals of the power transistor cells and may change the power supply voltage depending on the power mode.