H03F3/213

Isolated power transfer device
09812989 · 2017-11-07 · ·

An isolated power transfer device includes a transformer formed in a multi-layer substrate of an integrated circuit package. A primary winding of the transformer is coupled to a first integrated circuit to form a DC/AC power converter and a secondary winding of the transformer is coupled to a second integrated circuit to form an AC/DC power converter. The first and second integrated circuits are electrically isolated from each other. The first integrated circuit includes a lightly doped drain MOSFET integrated with conventional CMOS devices and the second integrated circuit includes a Schottky diode integrated with conventional CMOS devices. The isolated power transfer device includes a capacitive channel for communication of information across an isolation barrier from the second integrated circuit to the first integrated circuit. Capacitors of the capacitive channel may be formed in the multi-layer substrate of the integrated circuit package.

Isolated power transfer device
09812989 · 2017-11-07 · ·

An isolated power transfer device includes a transformer formed in a multi-layer substrate of an integrated circuit package. A primary winding of the transformer is coupled to a first integrated circuit to form a DC/AC power converter and a secondary winding of the transformer is coupled to a second integrated circuit to form an AC/DC power converter. The first and second integrated circuits are electrically isolated from each other. The first integrated circuit includes a lightly doped drain MOSFET integrated with conventional CMOS devices and the second integrated circuit includes a Schottky diode integrated with conventional CMOS devices. The isolated power transfer device includes a capacitive channel for communication of information across an isolation barrier from the second integrated circuit to the first integrated circuit. Capacitors of the capacitive channel may be formed in the multi-layer substrate of the integrated circuit package.

BROADBAND, HIGH-EFFICIENCY, NON-MODULATING POWER AMPLIFIER ARCHITECTURE
20220060151 · 2022-02-24 ·

Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

BROADBAND, HIGH-EFFICIENCY, NON-MODULATING POWER AMPLIFIER ARCHITECTURE
20220060151 · 2022-02-24 ·

Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

POWER AMPLIFIER MODULE

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

POWER AMPLIFIER MODULE

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

Multilevel class-D amplifiers

Implementations of a class-D amplifier can be used to amplify an input analog signal and provide to a load a multilevel amplified signal having an amplitude larger than a voltage level of a power source used by the class-D amplifier.

Multilevel class-D amplifiers

Implementations of a class-D amplifier can be used to amplify an input analog signal and provide to a load a multilevel amplified signal having an amplitude larger than a voltage level of a power source used by the class-D amplifier.

SINGLE SIGNAL-VARIANT POWER SUPPLY FOR A PLURALITY OF AMPLIFIERS

In accordance with embodiments of the present disclosure a control circuit may include at least one input for monitoring a respective signal for each of a plurality of amplifiers, an output for outputting at least one control signal for controlling a power supply level of the single signal-variant power supply configured to deliver electrical energy to the plurality of amplifiers, and decision and control logic. The decision and control logic may be configured to monitor the respective signals for each of the plurality of amplifiers and, based on the respective signals, and a respective requirement associated with each of the plurality of amplifiers, setting a power supply level of the single signal-variant power supply and outputting the at least one control signal to control the power supply level such that the respective requirements are satisfied.

SEMICONDUCTOR DEVICE

Each of cells arranged on a substrate surface along a first direction includes at least one unit transistor. Collector electrodes are arranged between two adjacent cells. A first cell, which is at least one of the cells, includes unit transistors arranged along the first direction. The unit transistors are connected in parallel to each another. In the first cell, the base electrode and the emitter electrode in each unit transistor are arranged along the first direction, and the order of arrangement of the base electrode and the emitter electrode is the same among the unit transistors. When looking at one first cell, a maximum value of distances in the first direction between the emitter electrodes of two adjacent unit transistors in the first cell being looked at is shorter than ½ of a shorter one of distances between the first cell being looked at and adjacent cells.