Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.

Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.

A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

An integrated circuit device is provided. In some examples, the integrated circuit device includes a first amplifier path, a second amplifier path coupled in parallel with the first amplifier path, a matching network coupled to the first amplifier path and the second amplifier path, and an antenna coupled to the matching network. In some such examples, the first amplifier path includes a first differential power amplifier coupled to the matching network, and the second amplifier path includes a second differential power amplifier coupled to the matching network. The integrated circuit device may further include a controller coupled to selectively enable the first amplifier path to provide a transmitter output power within a first range and to selectively enable the second amplifier path to provide a transmitter output power within a second range that is different from the first range.

An integrated circuit device is provided. In some examples, the integrated circuit device includes a first amplifier path, a second amplifier path coupled in parallel with the first amplifier path, a matching network coupled to the first amplifier path and the second amplifier path, and an antenna coupled to the matching network. In some such examples, the first amplifier path includes a first differential power amplifier coupled to the matching network, and the second amplifier path includes a second differential power amplifier coupled to the matching network. The integrated circuit device may further include a controller coupled to selectively enable the first amplifier path to provide a transmitter output power within a first range and to selectively enable the second amplifier path to provide a transmitter output power within a second range that is different from the first range.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.

Low-load-modulation, broadband power amplifiers and method of use are described. The amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the fully-on and fully backed-off states of the amplifier. With lower load modulation, the power amplifiers described herein exhibit better power-handling capability and RF fractional bandwidth as compared to conventional amplifiers.

A portable communication device includes a processor positioned in a first printed circuit board; a communication circuit; and an antenna module. The antenna module includes a second printed circuit board; a first antenna and a second antenna positioned in the second printed circuit board; a first transmission-reception circuit positioned in the second printed circuit board. The first transmission-reception circuit comprises a power amplifier for amplifying a signal to be transmitted through the first antenna, and a first low noise amplifier for amplifying a signal received through the first antenna. The power amplifier forms a portion of a transmission path electrically connected with the communication circuit and the first antenna. The first low noise amplifier forms a portion of a first reception path electrically connected with the communication circuit and the first antenna. The transmission path or the first reception path in the first transmission-reception circuit is selectively provided by the communication circuit. The portable communication device also includes a first reception circuit positioned in the second printed circuit board, wherein the first reception circuit does not comprise a power amplifier for amplifying a signal to be transmitted through the second antenna, and comprises a second low noise amplifier for amplifying a signal received through the second antenna, the second low noise amplifier forming a portion of a second reception path electrically connected with the communication circuit and the second antenna.