Nested microstrip systems and methods, and systems and methods encompassing same, are disclosed herein. In one example, a nested microstrip system includes a printed circuit board (PCB) having first and second layer levels, where first and second conductive traces are positioned at the second layer level. The first conductive trace is configured to include an orifice, and to extend between first and second locations along a first path, and the second conductive trace is positioned within the orifice. A non-conductive gap portion of the orifice exists between the first and second conductive traces so that the second conductive trace is electrically isolated from the first conductive trace. One or more first electromagnetic signals can be propagated along a first part of the first conductive trace, and one or more second electromagnetic signals can be propagated along at least a second part of the second conductive trace.

Nested microstrip systems and methods, and systems and methods encompassing same, are disclosed herein. In one example, a nested microstrip system includes a printed circuit board (PCB) having first and second layer levels, where first and second conductive traces are positioned at the second layer level. The first conductive trace is configured to include an orifice, and to extend between first and second locations along a first path, and the second conductive trace is positioned within the orifice. A non-conductive gap portion of the orifice exists between the first and second conductive traces so that the second conductive trace is electrically isolated from the first conductive trace. One or more first electromagnetic signals can be propagated along a first part of the first conductive trace, and one or more second electromagnetic signals can be propagated along at least a second part of the second conductive trace.

A power amplifier includes a power splitter that splits a first signal into a second signal and a third signal, a first amplifier that amplifies the second signal within an area where the first signal has a power level greater than or equal to a first level and that outputs a fourth signal, a second amplifier that amplifies the third signal within an area where the first signal has a power level greater than or equal to a second level higher than the first level and that outputs a fifth signal, an output unit that outputs an amplified signal of the first signal, a first and a second LC parallel resonant circuit, and a choke inductor having an end to which a power supply voltage is supplied and another end connected to a node of the first and second LC parallel resonant circuits.

A power amplifier includes a power splitter that splits a first signal into a second signal and a third signal, a first amplifier that amplifies the second signal within an area where the first signal has a power level greater than or equal to a first level and that outputs a fourth signal, a second amplifier that amplifies the third signal within an area where the first signal has a power level greater than or equal to a second level higher than the first level and that outputs a fifth signal, an output unit that outputs an amplified signal of the first signal, a first and a second LC parallel resonant circuit, and a choke inductor having an end to which a power supply voltage is supplied and another end connected to a node of the first and second LC parallel resonant circuits.

Describe is a buffer which comprises: a differential source follower coupled to a first input and a second input; first and second current steering devices coupled to the differential source follower; and a current source coupled to the first and second current steering devices. The buffer provides high supply noise rejection ratio (PSRR) together with high bandwidth.

Describe is a buffer which comprises: a differential source follower coupled to a first input and a second input; first and second current steering devices coupled to the differential source follower; and a current source coupled to the first and second current steering devices. The buffer provides high supply noise rejection ratio (PSRR) together with high bandwidth.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

A power amplifier system which operates at a narrow band with high power and high efficiency or at a wide band is provided. Said power amplifier system comprises at least one high power amplifier; at least one connection line; at least one input block which receives at least one signal from an input, which is connected to said high power amplifier and connection line, which sends received signal to either high power amplifier or connection line and which amplifies the power of the signal sent to the connection line; and at least one high power asymmetric output switch, which is connected to said high power amplifier and connection line and which sends signals coming from said high power amplifier and connection line to an output.

A topologically-protected traveling-wave amplifier includes resonators arranged in a two-dimensional array defining a periphery including a first edge. An output line is coupled to an output resonator disposed along the first edge spaced from an input resonator coupled to an output line. A synthetic gauge field generator associated with the resonators provides a topologically-protected edge state corresponding to propagation along the periphery in a propagation direction from the input resonator along the first edge to the output resonator. A parametric driving element creates pairs of photons in the edge state and amplifies a signal propagating along the first edge in the propagation direction. A signal incident from the input line propagates in the propagation direction along the first edge while being amplified and is detected at the output line as an amplified signal. A signal incident from the output line is attenuated before emerging at the input resonator.