A first wiring is disposed above operating regions of plural unit transistors formed on a substrate. A second wiring is disposed above the substrate. An insulating film is disposed on the first and second wirings. First and second cavities are formed in the insulating film. As viewed from above, the first and second cavities entirely overlap with the first and second wirings, respectively. A first bump is disposed on the insulating film and is electrically connected to the first wiring via the first cavity. A second bump is disposed on the insulating film and is electrically connected to the second wiring via the second cavity. As viewed from above, at least one of the plural operating regions is disposed within the first bump and is at least partially disposed outside the first cavity. The planar configuration of the first cavity and that of the second cavity are substantially identical.

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A signal processing system may include a modulation stage configured to generate a modulated input signal, an open-loop switched mode driver coupled to the modulation stage and configured to generate an output signal from the modulated input signal, a voltage regulator configured to generate a supply voltage that supplies electrical energy to the open-loop switched mode driver, and a control subsystem configured to, when a magnitude of the modulated input signal falls below a threshold magnitude, control the voltage regulator to control the supply voltage such that the output signal varies non-linearly with the modulated input signal for magnitudes of the modulated input signal below the threshold magnitude.

A signal processing system may include a modulation stage configured to generate a modulated input signal, an open-loop switched mode driver coupled to the modulation stage and configured to generate an output signal from the modulated input signal, a voltage regulator configured to generate a supply voltage that supplies electrical energy to the open-loop switched mode driver, and a control subsystem configured to, when a magnitude of the modulated input signal falls below a threshold magnitude, control the voltage regulator to control the supply voltage such that the output signal varies non-linearly with the modulated input signal for magnitudes of the modulated input signal below the threshold magnitude.

An amplifier has an N number of input networks connected to an input terminal to receive an input signal, a first amplifier to amplify one output signal from the N number of input networks, a (N1) number of secondary amplifiers to amplify the remaining (N1) number of output signals, except for the one output signal, from the N number of input networks, where the amplification order of the (N1) number of secondary amplifiers is determined based on the power level of each output signal from the N number of input networks when the first amplifier is operational, an N number of output networks which are arranged, and a first bias network to supply a D.C. bias voltage to at least one of the N number of output networks. An electrical length of the first bias network is less than 90 degrees.

An amplifier has an N number of input networks connected to an input terminal to receive an input signal, a first amplifier to amplify one output signal from the N number of input networks, a (N1) number of secondary amplifiers to amplify the remaining (N1) number of output signals, except for the one output signal, from the N number of input networks, where the amplification order of the (N1) number of secondary amplifiers is determined based on the power level of each output signal from the N number of input networks when the first amplifier is operational, an N number of output networks which are arranged, and a first bias network to supply a D.C. bias voltage to at least one of the N number of output networks. An electrical length of the first bias network is less than 90 degrees.

Variable-phase amplifier circuits and devices. In some embodiments, an amplifier can include a variable-gain stage having a plurality of switchable amplification branches, with each being capable of being activated, such that a combination of one or more activated amplification branches provides respective gain level and phase shift. The plurality of switchable amplification branches can be configured such that the phase shift provided by each combination of one or more activated amplification branches compensates for a phase shift associated with the amplifier operating with the respective gain level of the variable-gain stage.