Bias schemes for cascode power amplifiers are disclosed. In certain embodiments, a power amplifier system includes a cascode power amplifier powered by a first supply voltage and that amplifies a radio frequency input signal, and a bias circuit including a voltage regulator that generates a regulated voltage and is powered by the first supply voltage. The bias circuit further includes a bias voltage generation circuit that receives the regulated voltage and generates at least one cascode bias voltage for the cascode power amplifier, a switch that gates a second supply voltage to generate a gated supply voltage, a bias current generation circuit that controls a bias current of the cascode power amplifier and is powered by the gated supply voltage, and a gating circuit that controls the switch based on the regulated voltage and the second supply voltage.

A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

A fast-switching average power tracking (APT) power management integrated circuit (PMIC) is provided. The fast-switching APT PMIC includes a voltage amplifier(s) and an offset capacitor(s) having a small capacitance (e.g., between 10 nF and 200 nF). The voltage amplifier(s) is configured to generate an initial APT voltage(s) based on an APT target voltage(s) and the offset capacitor(s) is configured to raise the initial APT voltage(s) by an offset voltage(s) to generate an APT voltage(s). In embodiments disclosed herein, the offset voltage(s) is modulated based on the APT target voltage(s). Given the small capacitance of the offset capacitor(s), it is possible to adapt the offset voltage(s) fast enough to thereby change the APT voltage(s) within a predetermined temporal limit (e.g., 0.5 μs). As a result, the fast-switch APT PMIC can enable a power amplifier(s) to support dynamic power control with improved linearity and efficiency.

An electrical balance duplexer has multiple impedance gradients and multiple impedance tuners. The electrical balance duplexer transmits an outgoing signal from a transmitter during a transmission mode when a first set of impedance gradients of the multiple impedance gradients is operating in a first impedance state and a first set of impedance tuners of the multiple impedance tuners is operating in a second state. The electrical balance duplexer isolates the outgoing signal from a receiver during the transmission mode when a second set of impedance gradients of the multiple impedance gradients and a second set of impedance tuners of the multiple impedance tuners are operating in the second impedance state.

Broadband feedforward power amplifiers are disclosed herein. In certain embodiments, a broadband feedforward power amplifier includes a power amplifier electrically connected between a radio frequency (RF) input and an RF output, and a feedforward compensation circuit including a first amplifier electrically connected in parallel with the power amplifier, a load impedance, and a second amplifier electrically connected between the radio frequency input and the load impedance. The feedforward compensation circuit generates a compensation signal based on sensing an output of the first amplifier and an output of the second amplifier, and provides the compensation signal to the radio frequency output to thereby compensate the power amplifier for non-linearity.

A power supply switch circuit includes a first transistor that switches supplying of a first power supply voltage to a power supply terminal of a power amplifier, a switch controller that controls the first transistor and to which a second power supply voltage is applied, and a voltage selector that selects a higher voltage among the first power supply voltage and the second power supply voltage. The selected higher voltage is applied to a body terminal of the first transistor or a gate terminal of the first transistor.

Embodiments of the present disclosure include a harmonic power amplifying circuit with high efficiency and high bandwidth and a radio-frequency power amplifier. The circuit comprises an input matching network (11), a transistor (M), and an output matching network (12); a gate of the transistor (M) connected to an output end of the input matching network (11), a drain thereof connected to an input end of the output matching network (12), and a source thereof being grounded; wherein the output matching network (12) enables a lower sideband of the harmonic power amplifying circuit to work in a continuous inverse F amplification mode and an upper sideband of the harmonic power amplifying circuit to work in a continuous F amplification mode; wherein the output matching network (12) and a parasitic network of the transistor (M) form a low pass filter. By transitioning from the continuous inverse F power amplifier working mode to the continuous F power amplifier working mode, the efficiency of a continuous harmonic control power amplifier is effectively improved to be higher than 60%, a relative bandwidth is improved to be higher than 80%, and the harmonic impedance is simple to match and easy to realize.

A power amplifier circuit includes a power splitter, a first amplifier, a second amplifier, a third amplifier, a fourth amplifier, a first bias circuit, a first line connecting the first bias circuit and the first amplifier, and a second line connecting the first bias circuit and the third amplifier on the same semiconductor substrate, in which the first line and the second line are formed such that a voltage drop amount of the first bias voltage between the first bias circuit and the first amplifier is substantially equal to a voltage drop amount of the first bias voltage between the first bias circuit and the third amplifier.

A power amplification circuit including: a power splitter which splits an input signal into a first signal and a second signal; a first carrier amplifier which amplifies the first signal to output a first amplified signal; a first peak amplifier which amplifies the second signal when a power level of the second signal is larger than or equal to a predetermined power level to output a second amplified signal; and a combiner which combines the first amplified signal and the second amplified signal, in which the first carrier amplifier and the first peak amplifier are provided to a same semiconductor substrate.