The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

An acoustic wave device includes a support substrate, an acoustic reflection film on the support substrate, a piezoelectric layer on the acoustic reflection film, the piezoelectric layer including first and second primary surfaces, and first and second flat-plate electrodes on the first and second primary surfaces of the piezoelectric layer. The acoustic reflection film includes high acoustic impedance layers and low acoustic impedance layers alternately stacked together. At least one layer of the high acoustic impedance and low acoustic impedance layers is a stack of layers of first and second materials having equal or substantially equal acoustic impedances for at least one of longitudinal acoustic impedance and transversal acoustic impedance. The interface between the layers of first and second materials has irregularities.

A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.

The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.

Piezoelectric nitride compound materials with improved properties is provided. The piezoelectric material comprises aluminium, nitrogen and ternary and quaternary dopants that can be selected from calcium, ruthenium, boron and/or yttrium.

An electroacoustic resonator (EAR) that allows an RF filter having a large bandwidth is provided. The resonator comprises a piezoelectric material (PM) and an electrode structure (ES, EF) on the piezoelectric material. The piezoelectric material is lithium niobate and has a crystal cut defined by the Euler angles (0°, 80° to 88°, 0°).

A filter device includes a first substrate, a first input electrode and a first output electrode on the first substrate, a first ground electrode on the first substrate and receiving a ground potential, an electrically open portion in or on the first substrate, a second substrate mounted on the first substrate, a second input electrode on a surface of the second substrate and connected to the first input electrode, a second output electrode on the surface of the second substrate and connected to the first output electrode, a second ground electrode on the surface of the second substrate and connected to the first ground electrode, and at least one first functional electrode on the second substrate and disposed on a first connecting path connecting the second input electrode and the second output electrode. The open portion is connected to the first connecting path.

A surface acoustic wave device includes a piezoelectric substrate, functional elements on the piezoelectric substrate, a cover portion that opposes the piezoelectric substrate with a support layer interposed therebetween, and an input/output terminal on the cover portion. At least a portion of the functional elements includes an interdigital transducer electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. The functional elements include a filter that passes a signal in a predetermined frequency band, and a cancel circuit which is connected in parallel to the filter and attenuates a signal outside the predetermined frequency band in signals output from the output terminal. A portion of a wiring pattern connecting a first functional element and a second functional element included in the plurality of functional elements is provided on the cover portion.

An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φ.sub.LT=0°±5°, θ.sub.LT, ψ.sub.LT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency f.sub.h1_t.sup.(n) satisfies Formula (3) or Formula (4) for all m where m>n:

f.sub.h1_t.sup.(n)>f.sub.u.sup.(m)  Formula (3); and

f.sub.h1_t.sup.(n)<f.sub.l.sup.(m)  Formula (4).

In Formulas (3) and (4), f.sub.u.sup.(m) and f.sub.l.sup.(m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m band pass filters.

An acoustic wave filter includes a first resonance circuit including a first series arm resonator and a first capacitive element. The first series arm resonator is provided on a path connecting a first terminal and a second terminal. The first capacitive element is coupled in parallel with the first series arm resonator. The first series arm resonator includes a first divided resonator and a second divided resonator coupled in series with each other. The first resonance circuit includes a second resonance circuit including the first divided resonator and a second capacitive element coupled in parallel with the first divided resonator.