The present invention discloses a signal output apparatus. Each of two output circuits includes an inverter including an input terminal and an output terminal, and a resistor coupled between the output terminal and a differential output terminal. Each of MOS capacitors is coupled between the output terminals. Under a first operation mode, two current supplying circuits are disabled. The input terminals respectively receive a high and a low state input voltages and the output terminals generate a low and a high state output voltages. The capacitances become larger than a predetermined level. Under a second operation mode, one of the current supplying circuits is enabled to output a supplying current to the differential output terminal. The input terminals receive the high state input voltage. The output terminals generate the low state output voltage. The capacitances become not larger than the predetermined level.

A first stacked RF switch, which operates in one of an ON mode and an OFF mode, and includes a group of RF switching circuits coupled in series between a first RF switch connection node and a second RF switch connection node, is disclosed. The group of RF switching circuits includes a first RF switching circuit, which includes a first switching transistor element coupled between a first source connection node and a first drain connection node, a first source/drain (S/D) bias resistive element coupled across the first switching transistor element, and a first S/D shorting circuit coupled across the first S/D bias resistive element. During the ON mode, the first switching transistor element is ON and the first S/D shorting circuit is ON. During a first interval immediately following a transition from the ON mode to the OFF mode, the first S/D shorting circuit is ON.

An electronic circuit is for switching a power transistor having a drain coupled to a drain node, a source coupled to a lower voltage supply, and a gate coupled to a gate node. The electronic circuit includes first current generation circuitry to generate a first current to flow into the gate node in response to assertion off an ON signal, the first current being substantially constant. Second current generation circuitry generates a second current to flow into the gate node in response to deassertion of an OFF signal, the second current being inversely proportional to a gate to source voltage of the power transistor. First comparison circuitry compares a drain voltage at the drain node to a reference voltage, and activates third current generation circuitry to generate a third current to flow into the gate node when the drain voltage is less than the reference voltage.

The present invention provides a driving device and a control method. The driving device is configured to drive a power switch and includes a power supply, a first bridge arm coupled to the power supply, a second bridge arm coupled in parallel to the first bridge arm, and a resonant inductor. The first bridge arm includes a first switch and a second switch connected to a first midpoint, the second bridge arm comprises a first semiconductor element and a second semiconductor element connected to a second midpoint, and the resonant inductor is coupled between the first midpoint and the second midpoint. The control method includes turning on the first switch for a first period such that the power supply charges a gate electrode of the power switch; and in response to a decrease of a current of the resonant inductor to a first threshold value, turning on the first switch again for a second period such that a potential of the first midpoint is equal to a potential of the second midpoint.

A switch circuit includes first and second transistor stacks coupled in parallel between first and second ports. The first transistor stack includes a first plurality of transistors coupled in series between the first and second ports to provide a first variably-conductive path between the first and second ports. Each transistor of the first plurality of transistors has a gate terminal coupled to a first control terminal. The second transistor stack includes a second plurality of transistors coupled in series between the first and second ports to provide a second variably-conductive path between the first and second ports. Each transistor of the second plurality of transistors has a gate terminal coupled to a second control terminal. When implemented in a transceiver, first and second drivers are configured to simultaneously configure the first and second variably-conductive paths in a low-impedance state.

The present invention suggests a semiconductor device for integration into a power module. The semiconductor device comprises (a) a semiconductor layer (10), a first side of the semiconductor layer (10) having a plurality of depressions (11); (b) an insulating layer (12; 12a, 12b), the insulating layer being deposited on the first side of the semiconductor layer (10) and engaging in the depressions (11); (c) a first electrically conductive layer (14; 14a, 14b) for contacting the semiconductor device (1, 2), the first electrically conductive layer (14; 14a, 14b) being deposited on the insulating layer (12a, 12b); and (d) a second electrically conductive layer (16) for contacting the semiconductor device (1, 2), the second electrically conductive layer (16) being deposited on a second side of the semiconductor layer (10) opposite to the first side. The first electrically conductive layer (14; 14a, 14b) has a plurality of recesses (20, 20) and a plurality of subregions (24), and each subregion (24) is enclosed by at least one recess (20), leaving at least one region (22, 22) having a narrowed cross-section.

A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

The power circuit includes: a main substrate; a first electrode pattern disposed on the main substrate and connected to a positive-side power terminal P; a second electrode pattern disposed on a main substrate and connected to a negative-side power terminal N; a third electrode pattern disposed on the main substrate and connected to an output terminal O; a first MISFET Q1 of which a first drain is disposed on the first electrode pattern; a second MISFET Q4 of which a second drain is disposed on the third electrode pattern; a first control circuit (DG1) connected between a first gate G1 and a first source S1 of the first MISFET, and configured to control a current path conducted from the first source towards the first gate.

A switch includes an input terminal and an output terminal. The switch also includes a first stack having transistors coupled in series, and a second stack having transistors coupled in series. The first stack and the second stack are connected in parallel with one another.

A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass an RF signal between a signal input and a signal output when the RF switching device is on. A second FET having a second control terminal coupled to an acceleration output is configured to shunt the RF switching device when the second FET is on. A third FET is coupled between the first control terminal and the signal input for controlling charge on a gate of the first FET. A third control terminal of the third FET is coupled to an acceleration input for controlling an on/off state of the third FET.