Disclosed a drive method, a drive circuit for a power switch and a power supply system. During the turning-on period of the power switch, which can be roughly divided into three processes, a current limiting module is used to limit the current flowing through the power switch for preventing current overshoot, a logic control module is used for controlling the current limiting module not to operate before the turning-on period and the control terminal of the power switch is turned off; during the turning-on period, a feedback circuit adjusts the gate voltage of the power switch for controlling the current flowing through the power switch to reach a predetermined limited value quickly and then maintain at the limited value until the power switch is fully turned on. The current limiting module can be employed in various embodiments. According to the disclosure, the current flowing through the power switch can be effectively controlled during the turning-on period, and the driving time for turning on the power switch is decreased.

Boot-strapping systems and techniques for circuits are described. One or more solid-state switches of a switched regulation circuit may be implemented using core transistors and the boot-strapping systems, rather than I/O transistors.

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same V.sub.DS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same V.sub.GS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a trickle current state) that keeps both V.sub.GS and V.sub.DS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

Embodiments described herein include radio frequency (RF) switches. In general, the embodiments described herein selectively bias the output terminals of one or more switching transistors in the RF switch. Such coupling can provide a bias that significantly reduces the effects of gate-lag. In one embodiment, the RF switch includes an antenna node, a first input/output (I/O) node, a second I/O node, a field-effect transistor (FET), a FET stack, and a bias coupling circuit. In this embodiment the bias coupling circuit electrically couples a gate terminal of the FET to one or more FET output terminals of the FET stack to provide a bias voltage to the output terminal(s).

Provided is a switching device including: a cascode switch including at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors include a first transistor receiving the switching control signal through a control terminal and a second transistor having a control terminal connected to a first voltage source, and wherein the third switch is connected between the control terminal and the first terminal of the second transistor, is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off.

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same V.sub.DS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same V.sub.GS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a trickle current state) that keeps both V.sub.GS and V.sub.DS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

At least one aspect of the disclosure is directed to an AC switching system. The AC switching system includes a first I/O, a second I/O, a first segment including a first plurality of switches, the first segment being coupled to the first I/O, a second segment including a second plurality of switches, the second segment being coupled with the first segment and coupled to the second I/O, a third segment including a diode, the third segment being coupled to the first I/O and coupled to a junction of the first segment and the second segment, and a fourth segment including a diode, the fourth segment being coupled to the second I/O and coupled to the junction of the first segment and the second segment.

A fast shut-off solenoid circuit network includes a solenoid circuit and a current dissipation circuit. The solenoid circuit is operable in response to an electrical current, and configured to operate in an enable mode and a disable mode. The current dissipation circuit is configured to dissipate the current discharged from the solenoid circuit in response to invoking the disable mode. The fast shut-off solenoid circuit network further includes a dissipation bypass circuit. The dissipation bypass circuit is configured to divert the current discharged by the solenoid circuit away from current dissipation circuit when operating in the enable mode.

A FET driving circuit includes: inputs into which a DC voltage is inputted; outputs connected to gate and source electrodes of a FET; a switch; a capacitance connected across the switch; and an LC resonance circuit connected in series with the switch across the inputs. A voltage generated across the switch during switching is outputted to drive the FET. The LC resonance circuit has a first connector connected to one input and a second connector connected to the switch, and is configured with a path including an inductance and a path including an inductance and a capacitance. An impedance between the first and second connectors has two resonant frequencies. The impedance has a local maximum at the lower resonant frequency, which is higher than a switching frequency, and a local minimum at the higher resonant frequency, which is around double the switching frequency.

An Inter-IC interface with a glitch filter including at least two cascaded RC filters configured to compensate a signal skew of the data or clock signal received from a data communication or clock signal line, feedback switches configured to pull up or pull down a voltage at an output node of each of the at least two cascaded RC filters, and feedforward transistors configured to condition a respective switches to the feedback switches to accelerate the pull up or the pull down.