Patent classifications
H03K17/165
Gate Drive Apparatus and Method Thereof
A method includes detecting a signal on a switching node connected to a power switch, detecting a gate drive voltage of the power switch, during a gate drive process of the power switch, reducing a gate drive current based on a first comparison result obtained from comparing the signal with a first threshold, and during the gate drive process of the power switch, increasing the gate drive current based on a second comparison result obtained from comparing the gate drive voltage with a second threshold.
CIRCUIT AND CONTROL METHOD FOR PREVENTING FALSE TURN-ON OF SEMICONDUCTOR SWITCHING DEVICE
A circuit for preventing false turn-on of a semiconductor switching device includes an active clamp circuit, a control circuit, a power amplifier circuit, and a suppression circuit. The control circuit is coupled to an input of the power amplifier circuit. An output of the power amplifier circuit is coupled to a gate of the semiconductor switching device. The active clamp circuit is configured to operate within a preset period when a voltage between the first end of the semiconductor switching device and a second end of the semiconductor switching device is greater than a preset voltage. The suppression circuit includes a controllable switch, which is configured to turn on after the operation of the active clamp circuit is completed, such that potential at the input of the power amplifier circuit is clamped to a fixed potential.
Power modules having an integrated clamp circuit and process thereof
A power module apparatus includes a power substrate, at least one power device electrically connected to the power substrate and a gate-source board mounted relative to the power substrate, the gate-source board electrically connected to the at least one power device, a housing secured to the power substrate, and a clamping circuit electrically connected to the at least one power device. The clamping circuit being configured to reduce a voltage charge up at a gate of the at least one power device to within 8 V of a desired voltage.
Power modules having an integrated clamp circuit and process thereof
The disclosure is directed to a power module apparatus that includes a base plate, a power substrate positioned relative to the base plate, at least two power contacts, a gate-source board mounted relative to the power substrate, gate drive connectors electrically connected to the gate-source board, a housing secured to the power substrate, and a clamping circuit electrically connected to the at least one power device. The clamping circuit being configured to clamp an input to a gate of the at least one power device. The clamping circuit being arranged with at least one of the following: the base plate, the power substrate, one of the at least two power contacts, the at least one power device, the gate-source board, the gate drive connectors, and the housing. The disclosure is further directed to a process of configuring a power module apparatus.
Wide voltage gate driver using low gate oxide transistors
A gate driver circuit includes first through third transistors, a first voltage clamp, and control logic. The first transistor has a first control input and first and second current terminals. The first current terminal couples to a first voltage terminal. The first voltage clamp couples between the first voltage terminal and the first control input. The second transistor couples between the first control input and the second voltage terminal. The third transistor couples between the first control input and the second voltage terminal. The third transistor is smaller than the second transistor. The control logic is configured to turn on both the second and third transistors to thereby turn on the first transistor, and the first control logic configured to turn off the second transistor after the first transistor turns on while maintaining in an on-state the third transistor to maintain the first transistor in the on-state.
Pad-tracking circuit design to prevent leakage current during power ramp up or ramp down of output buffer
The present invention provides an output buffer including a first transistor, a second transistor and a pad-tracking circuit is disclosed. The first transistor is coupled between a supply voltage and an output node, wherein the output node is coupled to a pad. The second transistor is coupled between the output node and a reference voltage. The pad-tracking circuit is coupled to the control circuit and the first transistor, and is configured to generate a gate control signal to a gate electrode of the first transistor. The output buffer is selectively operated in an input mode and a fail-safe mode, and when the output buffer switches between the input mode and the fail-safe mode and the supply voltage of the first transistor ramps up or ramps down, the pad-tracking circuit generates the gate control signal to the gate electrode of the first transistor according to the voltage of the pad.
Doorbell chime bypass circuit
A doorbell chime bypass circuit includes a first node, a second node, and a bi-directional FET switch in series with the first node and the second current node. The bi-directional FET switch includes a first FET and a second FET in series, and is configured to cease conducting current between the first and second nodes when gate voltages of the first and second FETs are below a cut-off threshold. The bypass circuit further includes a sensing circuit configured to determine a level of current flowing through the bi-directional FET switch, and a switch controller configured to set the gate voltages of the first and second FETs to a level below the cut-off threshold when the sensing circuit senses that the level of current meets a doorbell press current threshold, causing the bi-directional FET switch to cease conducting current between the first and second nodes.
Converter techniques for sinking and sourcing current
Techniques for a sinking and sourcing power stage are provided. In an example, a power stage circuit can include a first power transistor configured to couple to a first input power rail, a second power transistor configured to couple to a second input power rail, an output node configured to couple to a load and to couple the first power transistor in series with the second power transistor between the first and second input power rails, and a controller configured to operate the first and second power transistors in a first mode to source current to the load and to operate the first and second power transistors in a second mode to sink current from the load.
POWER CONVERSION DEVICE
A power conversion device includes: main circuits each having a plurality of power modules that are parallelly connected to each other; and driving circuits for driving the main circuits. The driving circuits are each provided with: at least one driver for generating control signals to be inputted to the respective module control terminals of the plurality of power modules; and a filter that is connected between the at least one driver and the module control terminals, the filter having, per each module pair formed of two power modules, an impedance characteristic with a peak shape showing an increased impedance in a predetermined specific frequency range. The filter has a coupling element per each module pair, the coupling element being connected between two module control terminals and including a capacitor.
Dead time adjusting circuit
In a dead time adjusting circuit, a switch voltage appearing at a connection node between a first output switch and a second output switch, which are connected in series between two different potentials, is monitored to detect a first dead time, which is from a time at which the second output switch is turned off to a time at which the first output switch is turned on, and a second dead time, which is from a time at which the first output switch is turned off to a time at which the second output switch is turned on, each of the first and second dead times being feedback-controlled to be identical to a predetermined target value.