Patent classifications
H03K19/00338
CIRCUIT AND METHOD OF FORMING THE SAME
According to embodiments of the present invention, a circuit is provided. The circuit includes forming a first electrical device having a first region of a first conductivity type, forming a second electrical device having a second region of a second conductivity type, and electrically coupling the first region and the second region to each other, wherein one of the first and second regions is arranged to at least substantially surround the other of the first and second regions. According to further embodiments of the present invention, a method of forming a circuit is also provided.
Radiation-resistant asynchronous communications
An asynchronous circuit which includes a first circuit suitable for receiving, from a first other circuit, a first data input signal, and for generating a first acknowledgement of receipt signal and a first data output signal; a second circuit suitable for receiving, from a second other circuit, a second data input signal, and for generating a second acknowledgement of receipt signal and a second data output signal, the second circuit being functionally equivalent to the first circuit; a comparator suitable for detecting an inconsistency between the first and second data input or output signals; and at least one circuit for pausing an acknowledgement of receipt suitable for preventing the propagation of the first and second acknowledgement of receipt signals towards the first and second other circuits if an inconsistency is detected by the comparator.
SOFT ERROR-RESILIENT LATCH
A latch is provided. The latch includes a plurality of storage nodes including a plurality of data storage nodes configured to store a data bit having one of two states and a plurality of complementary data storage nodes configured to store a complement of the data bit. The latch includes a plurality of supply voltage multi-dependency stages respectively corresponding to the plurality of storage nodes. Each supply voltage multi-dependency stage has an output coupled to a storage node and at least two control inputs respectively coupled to at least two other storage nodes of the plurality of storage nodes. The supply voltage multi-dependency stage is configured to cause a state of the data bit stored in the storage node to change from a first state to a second state in response a change in both states of two data bits respectively stored in the at least two other storage nodes.
RADIATION-HARDENED D FLIP-FLOP CIRCUIT
A flip-flop circuit is disclosed. The flip-flop circuit includes a single-input inverter, a dual-input inverter, a single-input tri-state inverter, a dual-input tri-state inverter, and two single-event transient (SET) filters. The single-input tri-state inverter receives an input signal D. The dual-input tri-state inverter includes a first input, a second input and an output, wherein the first input receives output signals from the dual-input inverter and the second input receives output signals from the dual-input inverter via the first SET filter. The output of the dual-input tri-state inverter sends output signals to a first input of the dual-input inverter and a second input of the dual-input inverter via the second SET filter. The single-input inverter receives inputs from the dual-input inverter to provide an output signal Q for the flip-flop circuit.
Tristate and cross current free output buffer
A tristate output buffer includes a first branch with a first buffer, and a second branch with a second buffer. The first buffer includes a supply port, a ground port, an output port, two switchable semiconductor elements of a first type, and two switchable semiconductor elements of a second type. Switching behavior of the switchable semiconductor elements of the first type differs from switching behavior of the switchable semiconductor elements of the second type. The two switchable semiconductor elements of the first type are connected in series and are between the supply port and the output port such that they can be put in a conductive state independent of each other. The two switchable semiconductor elements of the second type are connected in series and are between the ground port and the output port such that they can be put in a conductive state independent of each other.
RADIATION-HARDENED ANALOG-TO-DIGITAL CONVERTER CIRCUIT, DIGITAL SIGNAL CALIBRATION METHOD THEREOF, AND RECORDING MEDIUM FOR PERFORMING THE METHOD
The present disclosure relates to a radiation-hardened analog-to-digital converter circuit and its digital signal calibration method capable of efficiently compensating for an external influence or a changed semiconductor element performance, and a recording medium for performing the method.
Level shifter circuit, corresponding device and method
A level-shifter circuit operates to shift an input signal referenced to a first set supply voltages to generate an output signal referenced to a second set of supply voltages. The output signal from the level-shifter circuit is latched by a latching circuit. A logic gate has a first input configured to receive the input signal, a second input configured to receive a feedback signal and an output coupled to a input of the level shifting circuit. A feedback circuit has a first input configured to receive the output signal, a second input configured to receive the input signal and an output configured to generate the feedback signal. The feedback circuit operates to sense an uncontrolled switching event of the output signal occurring in the absence of a switching of the input signal and apply, in response thereto, the feedback signal to cancel the uncontrolled switching event.
Radiation-damage-compensation-circuit and SOI-MOSFET
The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.
SINGLE EVENT LATCHUP RECOVERY WITH STATE PROTECTION
An apparatus that includes a single event latchup (SEL) recovery circuit, a microprocessor operatively connected with the SEL recovery circuit, and an output maintenance circuit that maintains a state of the microprocessor prior to a power cycle of the microprocessor. The apparatus is configured to detect a SEL event or other fault via a watchdog circuit, initiate a power cycle of the microprocessor, retain a latch state from the microprocessor, and determine whether the microprocessor was restarted due to an SEL event. Responsive to determining that the microprocessor has failed to restart due to a persistent fault, the apparatus determines whether a prepower cycle limit is reached within a predetermined span of time, and selectively provide power to a load based on the latch state and the power cycle limit determination.
Digital register component and analog-digital converter detecting signal distortion in high-radiation environments
A register and an analog-digital converter capable of detecting signal distortion in high-radiation environments are provided. The register includes: a signal input terminal receiving a digital signal; and a digital single event transient (DSET) detection unit detecting whether information of the digital signal input through the signal input terminal is distorted, wherein the DSET detection unit includes a first output terminal through which a first detection signal is output, the first detection signal being used to determine whether at least one of rising edge timing information and falling edge timing information of the digital signal is distorted.