A delay element including a first set of field effect transistors (FETs) with gates configured to receive a first control voltage; a second set of FETs coupled in series with the first set of FETs between a first voltage rail and a first node, respectively, the second set of FETs include gates configured to receive a set of complementary select signals, respectively; a third set of FETs including gates configured to receive a set of non-complementary select signals, respectively; a fourth set of FETs coupled in series with the third set of FETs between a second node and a second voltage rail, respectively, the fourth set of FETs including gates configured to receive a second control voltage; and an inverter coupled between the first node and the second node, the inverter including an input configured to receive an input signal and an output configured to produce an output signal.

The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.

Push-pull integrated circuit output drivers may interfere with communication by other entities on a bus when an integrated circuit is powered down. When there is no power and/or when the bonding pad is externally driven above the internal supply voltage, the substrate/body/well of the p-channel field effect transistor (PFET) of the output driver is biased to prevent its drain diode from becoming forward biased thereby preventing interference with communication on the bus. Also, when there is no power, driver is powered down or pull up is disabled, the gate of the driver PFET is driven to a voltage that ensures the driver PFET remains off when the bonding pad is externally driven above the internal supply voltage.

An electronic device may include one or more output buffers each including a pair of final p-channel metal oxide semiconductor (PMOS) and n-channel metal oxide semiconductor (NMOS) transistors, a first pre-buffer to drive the PMOS transistor, and a second pre-buffer to drive the NMOS transistor. Each output buffer receives power from a pre-buffer supply filtering circuit, which may include a supply capacitor for stabilizing supply voltage, a low-pass first pre-buffer supply filter to filter the voltage supplied to the first pre-buffer, and a low-pass second pre-buffer supply filter the voltage supplied to the second pre-buffer.

A circuit skew compensation trigger system comprises a voltage divider including a P-transistor and an N-transistor and a center node in the voltage divider pulled to a first level. The circuit skew compensation trigger system further comprising a trigger to activate when a skew between the P-transistor and the N-transistor is above a threshold. The trigger to initiate a compensator to adjust for the skew.

The apparatus may include a first latch configured to store a first state or a second state. The first latch may have a first latch input, one of a set input or a reset input, a first pulse clock input, and a first latch output. The first latch input may be coupled to a fixed logic value. The one of the set input or the reset input may be coupled to a clock signal or an inverted clock signal, respectively. The apparatus may include an AND gate having a first AND gate input, a second AND gate input, and a first AND gate output. The clock signal may be coupled to the first AND gate input. The first latch output may be coupled to the second AND gate input. The AND gate output may be configured to output a pulsed clock. The pulsed clock may be coupled to the first pulse clock input.

An apparatus comprising a first voltage domain circuit including a first circuit component configured to provide a first digital output signal; a second voltage domain circuit comprising a second circuit component; a level shifter arrangement configured to receive the first digital output signal and generate a second digital output signal based thereon with an increased voltage level of the high state, and provide said second digital output signal to the second circuit component; wherein the level shifter arrangement comprises at least one stage, the at least one stage comprising an arrangement of one or more diode-connected PMOS transistors, coupled to a CMOS inverter arrangement; the CMOS inverter arrangement of a first of the at least one stages configured to receive the first digital output signal and the CMOS inverter arrangement of a final stage of the at least one stages configured to output said second digital output signal.

A signal generation device outputs a signal based on a predetermined pattern with a logic transition to a predetermined external device. The signal generation device comprises an output driver which outputs respective signals based on at least two test patterns different in the frequency of the logic transition respectively to the predetermined external device, a regulator which supplies power to the output driver, a current compensation circuit which generates a compensation current, and a control circuit which adjusts a value of the compensation current. The control circuit adjusts, for each test pattern, the value of the compensation current such that a difference value calculated based on output voltages of the regulator becomes a determination criteria value or less.

A semiconductor integrated circuit device may include a main inverter and a negative bias temperature instability (NBTI) compensating circuit. The main inverter may be configured to receive an input signal. The main inverted may be configured to reverse the input signal. The main inverter may include a PMOS transistor and an NMOS transistor. The NBTI compensating circuit may be configured to receive the input signal. The NBTI compensating circuit may be selectively driven in an operation start time section of the PMOS transistor in the main inverter to compensate a driving force of the PMOS transistor.

An apparatus for generating an output voltage signal based on an input voltage signal. The apparatus includes a first field effect transistor (FET) including a first gate configured to receive a first gate voltage based on the input voltage signal; a second (FET) including a second gate configured to receive a second gate voltage based on the input voltage signal, wherein the first and second FETs are coupled in series between a first voltage rail and a second voltage rail, and wherein the output voltage signal is produced at an output node between the first and second FETs; and a gate overdrive circuit configured to temporarily reduce the first gate voltage during a portion of a transition of the output voltage signal from a logic low level to a logic high level.