Imagers and associated devices and systems are disclosed herein. In one embodiment, an imager includes a pixel array and control circuitry operably coupled to the pixel array. The pixel array includes an imaging pixel configured to produce a reset signal and a non-imaging pixel configured to produce a nominal reset signal. The control circuitry is configured to produce an output signal based at least in part on one of (a) the nominal reset signal when distortion at the imaging pixel exceeds a threshold and (b) the reset signal when distortion does not exceed the threshold.

An imaging device includes: a pixel; a signal line electrically connected to the pixel; and a first and second sample-and-hold circuits electrically connected to the signal line. The pixel includes: a photoelectric converter that generates signal charge; a charge accumulation region that accumulates the signal charge; a reset transistor that resets a voltage of the charge accumulation region; and an amplifier transistor that amplifies a signal voltage. The first sample-and-hold circuit includes: a first switch that is electrically connected to the signal line and has input-output characteristics in which an output is clipped at a clipping voltage with respect to an input exceeding the clipping voltage; and a first capacitor electrically connected to the signal line through the first switch. The second sample-and-hold circuit includes: a second switch electrically connected to the signal line; and a second capacitor electrically connected to the signal line through the second switch.

Various embodiments of the present technology may comprise a method and apparatus for anti-eclipse circuit verification. According to various embodiments, the image sensor is configured to test and/or determine the functionality of the anti-eclipse circuit. In various embodiments, the anti-eclipse circuit may employ redundant circuits and/or devices. In a case where a circuit fault is detected, the image sensor generates an error signal.

An image sensor may include an array of imaging pixels and row control circuitry. Each imaging pixel may include a photodiode, a floating diffusion region, a transfer transistor configured to transfer charge from the photodiode to the floating diffusion region, a dual conversion gain transistor coupled to the floating diffusion region, and a storage capacitor coupled to the dual conversion gain transistor. The capacitor may have a plate that receives a modulated control signal and the row control circuitry may be configured to modulate the control signal. To reduce image artifacts, the modulated control signal may be modulated low during the integration time of the pixel and may be modulated high during the high conversion gain readout time of the pixel.

A system and method is provided for performing high dynamic range digital double sampling. More particularly, a CMOS image sensor is provided that includes a pixel array with each pixel sampling both dark and bright values for digital double sampling. After the sampled signals are digitized, a mean dark value is determined and each dark value is further fed to a lookup table that generates an output value taking into account whether the pixel has been saturated. In over exposed conditions, the lookup table will generate a negative value output to eliminate image artifacts. All three values are fed to adder logic circuit that subtracts the mean dark value and the lookup table output from the bright value. This resulting output is fed to a video viewer.

Various embodiments of the present technology may comprise a method and apparatus for anti-eclipse circuit verification. According to various embodiments, the image sensor is configured to test and/or determine the functionality of the anti-eclipse circuit. In various embodiments, the anti-eclipse circuit may employ redundant circuits and/or devices. In a case where a circuit fault is detected, the image sensor generates an error signal.

An image sensor may include an array of imaging pixels and row control circuitry. Each imaging pixel may include a photodiode, a floating diffusion region, a transfer transistor configured to transfer charge from the photodiode to the floating diffusion region, a dual conversion gain transistor coupled to the floating diffusion region, and a storage capacitor coupled to the dual conversion gain transistor. The capacitor may have a plate that receives a modulated control signal and the row control circuitry may be configured to modulate the control signal. To reduce image artifacts, the modulated control signal may be modulated low during the integration time of the pixel and may be modulated high during the high conversion gain readout time of the pixel.

To prevent the black dot phenomenon from occurring in a differential amplification-type solid-state image sensor. A signal-side amplifier transistor generates an output voltage corresponding to a signal current corresponding to one of a pair of differential input voltages by supplying the signal current from an output node to a common-phase node. A reference-side amplifier transistor supplies a reference current corresponding to the other one of the pair of differential input voltages to the common-phase node. A constant current source constantly controls a sum of the signal current and the reference current to be merged at the common-phase node. A bypass control unit connects the output node and the common-phase node and supplies the signal current having a value corresponding to a predetermined limit voltage to the common-phase node in a case in which the output voltage reaches the limit voltage.

[Problem] An excessive amount of light received by an image sensor is detected with high accuracy without increasing the circuit scale.

[Solution] An imaging apparatus includes a pixel, unit including a photoelectric conversion element and a first transistor that outputs a signal photoelectrically converted by the photoelectric conversion element to a signal line; and an excessive light amount detection circuit that detects that the photoelectric conversion element receives an excessive amount of light. The excessive light amount detection circuit includes a second transistor and a capacitor that are connected in series between the signal line and a reference potential node; and a dummy circuit that adjusts a gate voltage of the second transistor in consideration of at least one of fluctuations in a voltage level of a power supply voltage, a parasitic resistance of the signal line, and variations in a threshold voltage of the first transistor.

[Problem] An excessive amount of light received by an image sensor is detected with high accuracy without increasing the circuit scale.

[Solution] An imaging apparatus includes a pixel, unit including a photoelectric conversion element and a first transistor that outputs a signal photoelectrically converted by the photoelectric conversion element to a signal line; and an excessive light amount detection circuit that detects that the photoelectric conversion element receives an excessive amount of light. The excessive light amount detection circuit includes a second transistor and a capacitor that are connected in series between the signal line and a reference potential node; and a dummy circuit that adjusts a gate voltage of the second transistor in consideration of at least one of fluctuations in a voltage level of a power supply voltage, a parasitic resistance of the signal line, and variations in a threshold voltage of the first transistor.